FDD86102LZ

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FDD86102LZ

MOSFET N-CH 100V 8A/35A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 8A (Ta), 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 22.5mOhm @ 8A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 26 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1540 pF @ 50 V
PowerDissipation(Max) 3.1W (Ta), 54W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

The FDD86102LZ is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications, particularly in power management circuits. It is commonly used in voltage regulation, DC-DC converters, and other power electronic systems due to its low on-resistance, high-speed switching capabilities, and thermal performance.
The device typically features a N-channel configuration, allowing it to handle larger currents and providing excellent efficiency. Its compact package design facilitates integration into a variety of electronic systems, making it suitable for consumer electronics, automotive applications, and industrial equipment.
The "FDD" in its designation indicates it is part of a specific family of devices, while the numbers denote its specifications, such as voltage and current ratings. The "LZ" suffix often refers to specific features or package types. Overall, the FDD86102LZ is valued for its reliability and performance in demanding applications.

Features

The FDD86102LZ is a high-performance N-channel power MOSFET designed for various applications, particularly in switching and amplification. Its key features include:
1. Voltage Rating: Typically rated for a drain-source voltage (Vds) of around 100V, making it suitable for high-voltage applications.
2. Current Handling: With a continuous drain current (Id) capability, it can handle substantial load currents, depending on the thermal management in use.
3. Low Rds(on): It boasts a low on-resistance, which enhances efficiency by minimizing conduction losses.
4. Fast Switching Speed: Designed for quick turn-on and turn-off times, favorable for high-frequency applications.
5. Thermal Performance: Incorporates a robust thermal resistance rating, allowing for effective heat dissipation.
6. Package Type: Typically available in a TO-220 or similar package, facilitating easy mounting and heat sink integration.
Overall, the FDD86102LZ is engineered for reliable performance in power management and control circuits.

Package

The FDD86102LZ is typically offered in a TO-220 package type, which is a metal tab package designed for high-power applications, providing efficient heat dissipation and robust performance.

Pinout

The FDD86102LZ is a dual N-channel MOSFET designed for power applications. It typically features a pin count of 8. The primary functions of the FDD86102LZ include:
1. High-Side Switching: Used in power management circuits to control high-side loads.
2. Low-Side Switching: Suitable for low-side switching applications in various electronic devices.
3. Fast Switching: Designed for efficient switching, minimizing power loss.
4. Thermal Management: Enhanced thermal performance due to its package design, which allows for effective heat dissipation.
The specific pinout generally includes gate, drain, and source connections for both MOSFETs in the package. Always refer to the manufacturer’s datasheet for precise pin assignments and electrical characteristics.

Manufacturer

The FDD86102LZ is manufactured by ON Semiconductor, a prominent semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and digital solutions. The company serves various markets such as automotive, industrial, and consumer electronics. Founded in 1999, ON Semiconductor has grown through a series of mergers and acquisitions, expanding its portfolio and global presence. Its focus on energy-efficient technologies and innovations makes it a key player in the semiconductor industry.

Application

The FDD86102LZ is a MOSFET commonly used in various applications, including power management, DC-DC converters, and load switching. It is suitable for CPU power supplies, graphics cards, and other high-efficiency power applications due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in automotive electronics, renewable energy systems, and industrial equipment for efficient power control and conversion.

Equivalent

Equivalent products to the FDD86102LZ chip include the FDD86104LZ, FDD86106LZ, and similar MOSFETs from other manufacturers, such as the IRF3205 or BSC090N06LS. Always verify specifications like voltage, current rating, and package type when looking for substitutes.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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