FDC658AP

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FDC658AP

SMALL SIGNAL FIELD-EFFECT TRANSI

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Spécifications

Package Bulk
Series PowerTrench®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 50mOhm @ 4A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.1 nC @ 5 V
Vgs(Max) ±25V
InputCapacitance(Ciss)(Max)@Vds 470 pF @ 15 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6

Vue d'ensemble

Description

FDC658AP is a high-performance power MOSFET designed for various applications, including power management and switching. It features a low on-resistance, which minimizes power loss, making it suitable for efficient energy transfer in DC-DC converters, power supplies, and motor drives.
Key specifications typically include a maximum drain-source voltage (V_DS), low gate threshold voltage (V_GS(th)), and high current handling capabilities. The FDC658AP is often used in consumer electronics, automotive applications, and industrial systems due to its reliability and thermal performance.
This device is usually packaged in a compact form, facilitating easy integration into diverse circuit designs. Engineers appreciate its fast switching speeds, which enable high-frequency operation, further enhancing system efficiency. Overall, the FDC658AP is a versatile component in modern electronic design, providing robust performance in a wide range of power applications.

Features

The FDC658AP is a dual N-channel MOSFET designed for various power management applications. Key features include:
1. High Current Handling: It supports a continuous drain current of up to 30A, making it suitable for high-power applications.
2. Low On-Resistance: The device offers a low R_DS(on) value, typically around 0.045 ohms, which improves efficiency by minimizing power loss during operation.
3. Wide Voltage Range: It operates within a voltage range of 20V, allowing it to be used in diverse circuit environments.
4. Fast Switching Speed: The MOSFET is designed for rapid switching, enhancing performance in pulse-width modulated (PWM) applications.
5. Thermal Stability: With a robust package, it can dissipate heat effectively, ensuring reliable operation under high temperatures.
6. Compact Surface Mount Package: The FDC658AP typically comes in a compact SO-8 package, optimizing space in circuit designs.
These features make the FDC658AP suitable for applications such as motor control, power management, and DC-DC converters.

Package

The FDC658AP is packaged in a standard TO-220 package type, which is commonly used for power transistors and semiconductor devices, providing good thermal performance and ease of mounting.

Pinout

The FDC658AP is a dual N-channel MOSFET in a surface-mount package, specifically designed for applications such as power management and switching. It typically has a pin count of 8.
The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Control gate for the first N-channel MOSFET.
2. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
5. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Gate 2 (G2) - Control gate for the second N-channel MOSFET.
7. Drain (D) - Common drain for both MOSFETs.
8. Source (S) - Common source for both MOSFETs.
This configuration allows for efficient switching and control in various electronic applications. Always refer to the specific datasheet for detailed electrical characteristics and ratings.

Manufacturer

The FDC658AP is manufactured by Fairchild Semiconductor, a company known for its production of semiconductor solutions. Fairchild Semiconductor specializes in a wide range of products, including power management, analog, and mixed-signal devices. Founded in 1957, the company has a significant history in the semiconductor industry and is recognized for its innovations in technology.
In 2016, Fairchild was acquired by ON Semiconductor, a global semiconductor manufacturer that provides a diverse portfolio of products for various applications, including automotive, industrial, and consumer electronics. Overall, Fairchild's legacy continues under ON Semiconductor, focusing on delivering high-performance semiconductor solutions to meet evolving market demands.

Application

The FDC658AP is a dual N-channel MOSFET commonly used in various applications including power management circuits, motor drivers, load switching, and inverters. Its fast switching speed and low on-resistance make it suitable for battery-operated devices, DC-DC converters, and other high-efficiency power applications. Additionally, it can be used in automotive electronics and consumer electronics for reliable performance in compact designs.

Equivalent

The FDC658AP is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000. For higher current applications, consider the IRF520 or IRL520. Check specific datasheets for compatibility in terms of voltage, current ratings, and package types.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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