FDC655BN

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FDC655BN

MOSFET N-CH 30V 6.3A SUPERSOT6

  • Fabricant
  • Mfr. Partie #FDC655BN
  • Paquet SSOT-6
  • Fiche de données
  • En stock6461

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 6.3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 25mOhm @ 6.3A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 570 pF @ 15 V
PowerDissipation(Max) 1.6W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SuperSOT™-6

Vue d'ensemble

Description

FDC655BN is a dual N-channel MOSFET designed for various applications, including power management, switching, and amplification in electronic circuits. It features a low on-resistance, high-speed switching capability, and is optimized for efficiency in power applications. The device typically operates within a voltage range of 30V and can handle continuous currents up to several amperes, making it suitable for use in consumer electronics, automotive systems, and industrial equipment.
Key specifications often include a low threshold voltage, fast switching speeds, and high thermal performance, which help in reducing energy losses and improving overall system reliability. Its compact package design allows for easy integration into PCB layouts, contributing to space-saving in product designs. The FDC655BN is often utilized in applications like DC-DC converters, motor drivers, and load switching, where reliability and efficiency are paramount. Overall, the FDC655BN is a versatile component that supports modern electronic design needs.

Features

The FDC655BN is a high-performance power MOSFET designed for various applications, including power management and switching. Key features include:
1. N-Channel Configuration: Ideal for high-side and low-side switching applications.
2. Low On-Resistance (Rds(on)): Ensures efficient operation with minimal power loss.
3. High-Voltage Rating: Capable of handling significant voltage levels, making it suitable for demanding environments.
4. Fast Switching Speed: Enables efficient operation in high-frequency applications.
5. Thermal Stability: Designed to manage heat effectively, enhancing reliability and longevity.
6. Compact Package: Available in a small footprint, facilitating space-saving designs in electronic circuits.
These characteristics make the FDC655BN suitable for a range of uses, including power supplies, motor drives, and battery management systems.

Package

The FDC655BN is packaged in a SO-8 (Small Outline 8) package type, which is a surface-mount package that is typically used for integrated circuits in compact electronic designs.

Pinout

The FDC655BN is a N-channel MOSFET with a total of 8 pins. The pin configuration and functions are typically as follows:
1. Gate (G) - Pin 1: Controls the switching of the MOSFET.
2. Drain (D) - Pin 2: Connected to the load; current flows out of the drain.
3. Source (S) - Pin 3: The source of current; connected to the ground or negative side of the circuit.
4-8. Other pins may include various configurations for additional functionalities or test points, but primarily the FDC655BN operates with the basic three terminals—gate, drain, and source.
This MOSFET is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities. Always refer to the specific datasheet for detailed pin assignments and electrical characteristics.

Manufacturer

The FDC655BN is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and digital solutions, as well as sensors and connectivity products. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through a series of acquisitions and innovations, positioning itself as a key player in the semiconductor market.

Application

The FDC655BN is primarily used in applications such as power management, DC-DC converters, and load switching. Its high efficiency and fast switching capabilities make it suitable for battery-operated devices, portable electronics, and other low-voltage applications. Additionally, it can be used in telecommunications and industrial automation systems where reliable performance is essential.

Equivalent

The FDC655BN is a dual N-channel MOSFET. Equivalent products include the FDC655B, FDS655BN, and other similar dual N-channel MOSFETs from manufacturers like Fairchild, ON Semiconductor, and Vishay. Always check specific parameters like V_DS, I_D, and R_DS(on) for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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