FDC6301N

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FDC6301N

MOSFET 2N-CH 25V 220MA SSOT6

  • Fabricant
  • Mfr. Partie #FDC6301N
  • Paquet SSOT-6
  • Fiche de données
  • En stock5959

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 25V
Current-ContinuousDrain(Id)@25°C 220mA
RdsOn(Max)@IdVgs 4Ohm @ 400mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.7nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 9.5pF @ 10V
Power-Max 700mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Vue d'ensemble

Description

FDC6301N is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications in power management. It features a low on-resistance (RDS(on)), which minimizes conduction losses, making it suitable for use in power supplies, DC-DC converters, and motor control circuits. This N-channel MOSFET is capable of handling high voltages and currents, typically with a maximum drain-source voltage (VDS) around 30V and a continuous drain current (ID) rating of up to 62A under specific conditions.
FDC6301N is known for its fast switching speeds, which contribute to improved efficiency in switching applications. It also features a small package size, allowing for compact circuit designs. The gate threshold voltage (VGS(th)) is designed to ensure compatibility with various drive voltages. Overall, the FDC6301N is a robust choice for engineers seeking reliable and efficient power management solutions in their electronic designs.

Features

The FDC6301N is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 10A, allowing for significant power delivery.
3. Low On-Resistance (RDS(on)): Typically around 0.045 ohms, which minimizes conduction losses and improves thermal performance.
4. Fast Switching Speed: Designed for rapid switching, enabling efficient operation in high-frequency applications.
5. Gate Threshold Voltage (VGS(th)): The gate threshold voltage is typically between 1V to 3V, allowing for easy drive with low-voltage control signals.
6. Package Type: Available in a compact SO-8 package, which aids in space-saving designs on PCBs.
These features make the FDC6301N ideal for applications in power management, DC-DC converters, and motor control.

Package

The FDC6301N is typically packaged in a 5-lead SOT-23 package.

Pinout

The FDC6301N is a dual N-channel MOSFET in a surface-mount package. It features a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1) - Controls the turning on/off of the first N-channel MOSFET.
2. Drain 1 (D1) - The output terminal for the first N-channel MOSFET.
3. Source 1 (S1) - The source terminal for the first N-channel MOSFET, typically connected to ground.
4. Gate 2 (G2) - Controls the turning on/off of the second N-channel MOSFET.
5. Drain 2 (D2) - The output terminal for the second N-channel MOSFET.
6. Source 2 (S2) - The source terminal for the second N-channel MOSFET, also typically connected to ground.
7. Drain/Source Common (D/S) - Connects the two FETs together for common source configurations.
8. Tab (Thermal Pad) - Used for heat dissipation; typically connected to a ground or heat sink.
The FDC6301N is commonly used in power management applications, including voltage regulation and load switching.

Manufacturer

The FDC6301N is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor. Fairchild Semiconductor was known for its production of a wide range of semiconductor devices, including power transistors, MOSFETs, and integrated circuits. The company played a significant role in the development of the semiconductor industry and was one of the original manufacturers in Silicon Valley. It focused on providing innovative solutions for various applications, including consumer electronics, automotive, and industrial sectors. After being acquired by ON Semiconductor in 2016, the legacy of Fairchild's technology and product lines continued under the ON Semiconductor umbrella, which is a major player in the semiconductor market, focusing on energy-efficient solutions and various electronic components.

Application

The FDC6301N is a dual N-channel MOSFET widely used in applications such as power management, DC-DC converters, motor drivers, and load switching. Its features include low on-resistance and fast switching speeds, making it suitable for battery-powered devices, consumer electronics, and automotive applications where efficient power control is essential.

Equivalent

The FDC6301N is a dual N-channel MOSFET. Equivalent products include the IRF630, BSS138, and STP16NF06. However, ensure to check specifications like voltage, current ratings, and package type to confirm compatibility before substitution.

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