FDC608PZ

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FDC608PZ

MOSFET P-CH 20V 5.8A SUPERSOT6

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  • Mfr. Partie #FDC608PZ
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Spécifications

Series PowerTrench®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1330 pF @ 10 V
Power Dissipation (Max) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6
Base Product Number FDC608

Vue d'ensemble

Description

The FDC608PZ is likely a component or product identifier, possibly within the field of electronics or semiconductor devices. Unfortunately, without specific information about the context or the manufacturer, providing a detailed introduction is challenging. If it's a semiconductor part, it might be a MOSFET, transistor, or diode, considering typical naming conventions. These components are essential in electronic circuits for switching, amplifying, or controlling electrical signals.
To gain a comprehensive understanding, it would be best to consult the datasheet from the manufacturer, which would detail specifications such as voltage ratings, current capacity, package type, and typical applications. This document would also provide pin configurations, thermal characteristics, and guidelines for integration into circuits. If it's part of a larger assembly, understanding its role requires examining the whole system's documentation. If you have any additional context or a specific manufacturer in mind, that could help in providing a more accurate and concise introduction.

Features

The FDC608PZ is a power device known for its efficiency and performance in various applications. Here are its key features:
1. N-Channel MOSFET: This device utilizes an N-Channel MOSFET structure, which is preferred for its efficiency in switching applications.
2. Low On-Resistance: It features a low on-resistance, which reduces power loss and enhances performance in power management applications.
3. Compact Package: The FDC608PZ is housed in a small package, making it suitable for compact and portable electronic devices.
4. High-Speed Switching: The device supports high-speed switching, which is essential for applications requiring efficient power management.
5. Thermal Management: It has good thermal performance, ensuring reliability and stability under various operating conditions.
6. Wide Range of Applications: Suitable for use in power management, load switching, and DC-DC conversion applications.
7. Enhanced Efficiency: Optimized for applications that require improved energy efficiency and lower heat generation.
These features make the FDC608PZ a reliable choice for engineers focusing on designing energy-efficient electronic devices.

Package

The FDC608PZ is a power MOSFET typically housed in a SuperSOT-6 package, which is a compact, surface-mount package designed for efficient thermal performance and space savings on printed circuit boards.

Pinout

The FDC608PZ is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for power management applications. It typically comes in a SuperSOT-6 package, which comprises 6 pins. The pin configuration and functions are as follows:
1. Source (S1 and S2): These are the source terminals of the MOSFET. There are usually two source pins that are internally connected to enhance current capacity.
2. Gate (G): This pin controls the MOSFET's on/off state by applying the appropriate voltage level.
3. Drain (D1 and D2): These are the drain terminals of the MOSFET. Similar to the source, there are typically two drain pins to handle higher current.
In summary, the FDC608PZ has 6 pins distributed as two source pins, one gate pin, and two drain pins. It is designed for switching applications and used to control power delivery in various electronic devices.

Manufacturer

The FDC608PZ is manufactured by ON Semiconductor. ON Semiconductor is a leading global supplier of semiconductor-based solutions. The company focuses on energy-efficient electronics and specializes in products such as power and signal management, logic, discrete, and custom devices for applications in the automotive, communications, computing, consumer, industrial, and medical sectors.

Application

The FDC608PZ is typically used in capacitive sensing applications, such as touch interfaces, proximity detection, fluid level sensing, and material composition analysis. It is often utilized in consumer electronics, automotive systems, industrial automation, and home appliances for precise and reliable sensing solutions.

Equivalent

The FDC608PZ is a P-channel MOSFET. Equivalent products include:
1. SI2301 - A P-channel MOSFET with similar specifications.
2. BS250 - Another equivalent P-channel MOSFET.
3. FDS6679AZ - A close alternative with comparable characteristics.
4. IRLML6402 - Offers similar functionality in a small package.
Always verify key parameters like voltage, current, and package type to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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