FDB33N25TM

Les images sont à titre de référence seulement

FDB33N25TM

POWER FIELD-EFFECT TRANSISTOR, 3

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Bulk
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 33A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 94mOhm @ 16.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 48 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2135 pF @ 25 V
PowerDissipation(Max) 235W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D2PAK (TO-263)

Vue d'ensemble

Description

The FDB33N25TM is an N-channel MOSFET designed for use in various power applications. It features a low on-resistance, enabling efficient performance and reduced power losses in circuits. With a maximum drain-source voltage of 25V and a continuous drain current of 33A, it is suitable for switching and amplification tasks in power management systems.
The device is housed in a TO-220 package, which provides good thermal management, allowing for higher power dissipation. Its fast switching speeds make it ideal for applications such as motor drivers, power supplies, and LED lighting. Additionally, the FDB33N25TM typically has a gate threshold voltage between 2-4V, which ensures compatibility with logic-level control signals.
Overall, the FDB33N25TM is a robust and versatile component for engineers looking to enhance efficiency in electronic designs.

Features

The FDB33N25TM is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (VDS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: It supports a continuous drain current of up to 33A, allowing it to handle substantial loads efficiently.
3. Low RDS(on): The device features a low on-resistance (RDS(on)), which minimizes conduction losses and enhances efficiency.
4. Fast Switching: It offers rapid switching capabilities, making it ideal for applications in power management and switching converters.
5. Thermal Performance: It comes with a high thermal conductivity, enabling effective heat dissipation to maintain reliability under load.
This MOSFET is commonly used in various applications, including power supplies, motor drivers, and DC-DC converters, where efficiency and performance are critical.

Package

The FDB33N25TM is packaged in a TO-220 form factor.

Pinout

The FDB33N25TM is a N-channel MOSFET with a pin count of 8. It is typically used in power management applications and features a low on-resistance, making it suitable for high-efficiency switching.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The main current-carrying terminal; connected to the load.
3. Source (S) - Connected to ground or the negative side of the circuit.
Additionally, depending on the specific package (usually SO-8), the remaining pins are often used for additional functionality such as a substrate or body diode connection.
Always refer to the manufacturer's datasheet for detailed specifications and characteristics.

Manufacturer

The FDB33N25TM is manufactured by Fairchild Semiconductor, which is a subsidiary of ON Semiconductor Corporation. Fairchild Semiconductor is known for producing a wide range of semiconductor products, including power management solutions, analog devices, and discrete components. The company specializes in developing innovative technologies for various applications, including automotive, industrial, and consumer electronics. ON Semiconductor focuses on providing energy-efficient solutions and has a diverse portfolio that supports various electronic applications.

Application

The FDB33N25TM is a power MOSFET widely used in applications such as DC-DC converters, power management systems, motor control, and switch-mode power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power conversion and thermal management in consumer electronics, automotive systems, and industrial equipment.

Equivalent

The FDB33N25TM is a N-channel MOSFET. Equivalent products include the IRF3205, STP33NF25, and AOD320. Always verify specifications like voltage, current ratings, and package type to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire