FDB031N08

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FDB031N08

MOSFET N-CH 75V 120A D2PAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series PowerTrench®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 75 V
Current-ContinuousDrain(Id)@25°C 120A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 3.1mOhm @ 75A, 10V
Vgs(th)(Max)@Id 4.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 220 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 15160 pF @ 25 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK (TO-263)

Vue d'ensemble

Description

FDB031N08 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) developed for high-efficiency applications. It features a N-channel configuration, which allows for effective switching and amplification of electronic signals. This device is designed to operate with low on-resistance, enabling reduced power loss and improved thermal performance in various applications, such as power management, motor control, and DC-DC converters.
Key specifications often include voltage ratings, current ratings, and gate threshold voltages that define its operational limits. The FDB031N08 is typically used in industrial, automotive, and consumer electronics applications where efficient power conversion is critical. Its compact form factor allows for easy integration into circuit designs, making it a popular choice among engineers looking for reliable performance in their projects. Proper thermal management and circuit design are essential to maximize its performance and longevity in applications.

Features

The FDB031N08 is an N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 80V, making it suitable for high-voltage applications.
2. Current Handling: Continuous drain current (Id) rating of 31A, which supports substantial load requirements.
3. Low On-Resistance: With a typical Rds(on) of approximately 3.1 mΩ at 10V gate drive, it ensures minimal power loss during operation.
4. Fast Switching Speed: Optimized for high-speed switching, making it ideal for power supply and motor control applications.
5. Thermal Performance: Features a maximum junction temperature of 175°C, allowing for reliable operation under extreme conditions.
6. Package Type: Available in a DPAK package, which provides efficient thermal dissipation and ease of mounting.
These features make the FDB031N08 suitable for various applications, including DC-DC converters, power management systems, and automotive electronics.

Package

The FDB031N08 is packaged in a TO-247 format, which is a type of power package commonly used for high-voltage applications. This package provides good thermal performance and is suitable for mounting on heat sinks.

Pinout

The FDB031N08 is a N-channel MOSFET manufactured by Fairchild Semiconductor, designed for power management applications. It features a pin count of six. The pinout is typically as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connects to the load; current flows out of this pin when the MOSFET is on.
3. Source (S): Connects to ground or the negative side of the power supply.
The function of the FDB031N08 is to switch or amplify electronic signals in various applications, such as power supplies, motor drivers, and other circuits requiring high efficiency and fast switching speeds. It has a low on-resistance, which helps to minimize power loss and heat generation during operation. This device is suitable for applications operating at low to medium voltages and currents.

Manufacturer

The FDB031N08 is a power MOSFET manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and discrete components. The company serves various industries, including automotive, industrial, and consumer electronics, providing innovative technologies to enhance energy efficiency and performance. Established in 1999, ON Semiconductor has grown through a combination of organic growth and strategic acquisitions, becoming a significant player in the semiconductor market.

Application

The FDB031N08 is an N-channel MOSFET primarily used in power management applications, such as DC-DC converters, switch-mode power supplies, and motor control circuits. Its low on-resistance and high-speed switching capabilities make it suitable for applications in electric vehicles, renewable energy systems, and consumer electronics, where efficient power conversion and thermal performance are critical.

Equivalent

The FDB031N08 is an N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and BSS123. Ensure to verify specifications like voltage rating, current capacity, and R_DS(on) to confirm compatibility. Always refer to the manufacturer's datasheets for precise comparisons.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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