FDA69N25

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FDA69N25

POWER FIELD-EFFECT TRANSISTOR, 6

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Spécifications

Package Bulk
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 250 V
Current-ContinuousDrain(Id)@25°C 69A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 41mOhm @ 34.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 100 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4640 pF @ 25 V
PowerDissipation(Max) 480W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PN

Vue d'ensemble

Description

FDA69N25 is not a widely recognized term or designation in the public domain, including areas related to the U.S. Food and Drug Administration (FDA), pharmaceuticals, or regulatory affairs. If this refers to a specific drug, regulatory document, or guideline, further context is needed to provide an accurate introduction. For clarity, please check if the designation is a code for a specific study, drug application, or regulation within a niche field. If it relates to a specific product or guideline, providing more details will help in giving a precise and relevant introduction.

Features

The FDA69N25 is a high-performance N-channel MOSFET designed for various applications in power management. Key features include:
1. Voltage Rating: Typically rated for a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: With a continuous drain current (I_D) capability of 25A, it can handle significant power loads.
3. Low R_DS(on): Offers a low on-resistance, which enhances efficiency and reduces heat generation during operation.
4. Fast Switching: Designed for high-speed switching applications, beneficial for switch-mode power supplies and DC-DC converters.
5. Thermal Performance: Good thermal characteristics to manage heat dissipation, often featuring a TO-220 or similar package for effective heat sinking.
6. Protection Features: May include built-in protection against over-voltage and thermal runaway.
Overall, the FDA69N25 is ideal for various applications in consumer electronics, automotive, and industrial systems, where efficiency and reliability are critical.

Package

The FDA69N25 is typically available in a TO-220 package type, which is a standard format for power transistors. This package provides efficient heat dissipation and is commonly used in various electronic applications.

Pinout

The FDA69N25 is a power MOSFET with a total of 6 pins. Here’s a concise overview of its pin configuration and functions:
1. Gate (G) - Pin 1: This pin is used to control the switching of the MOSFET. A voltage applied to the gate determines whether the device is on or off.
2. Drain (D) - Pin 2: This pin is connected to the load. Current flows from the drain to the source when the MOSFET is in the on state.
3. Source (S) - Pin 3: This pin is connected to the ground or power supply return. It is the terminal through which current exits the MOSFET.
4. Gate (G) - Pin 4: This is typically another gate connection for dual-gate configurations or sometimes used for additional control.
5. Drain (D) - Pin 5: This serves as a second drain terminal in some configurations.
6. Source (S) - Pin 6: This serves as a second source terminal in similar configurations.
The FDA69N25 is primarily used in applications requiring efficient switching and amplification.

Manufacturer

The FDA69N25 is manufactured by Fairchild Semiconductor, which is a company known for producing a range of semiconductor products, including power transistors, voltage regulators, and integrated circuits. Fairchild, founded in 1957, specializes in providing innovative solutions for various applications in consumer electronics, automotive, industrial, and telecommunications sectors. The company is recognized for its high-performance semiconductor technologies that enable energy efficiency and advanced functionality in electronic devices. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, further expanding the latter's portfolio in the semiconductor market.

Application

FDA69N25 is a high-performance silicon carbide (SiC) power MOSFET primarily used in applications such as electric vehicles, renewable energy systems, industrial motor drives, and power converters. Its characteristics enable efficient power switching, high-temperature operation, and reduced energy loss, making it suitable for demanding environments and applications requiring high reliability and efficiency.

Equivalent

The FDA69N25 chip is a power MOSFET typically used for switching applications. Equivalent products include the IRF250, FQP50N25, and STP50NF25. When selecting an equivalent, ensure similar specifications such as voltage rating, current rating, and RDS(on) to ensure compatibility in your application. Always check the datasheets for detailed comparisons.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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