FDA24N50F

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FDA24N50F

MOSFET N-CH 500V 24A TO3PN

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Spécifications

Supplier onsemi
Package Tube
Series UniFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V
Current-ContinuousDrain(Id)@25°C 24A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 200mOhm @ 12A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 85 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 4310 pF @ 25 V
PowerDissipation(Max) 270W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PN

Vue d'ensemble

Description

FDA24N50F is a power transistor, specifically a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) rating of 24A, making it suitable for switching and amplification tasks in power electronics.
This MOSFET typically offers low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. It also has fast switching capabilities, allowing for rapid turn-on and turn-off times, making it ideal for applications such as power supplies, motor drives, and converters.
Key parameters to consider when using FDA24N50F include its threshold voltage, gate-source voltage ratings, and thermal characteristics. Proper thermal management is crucial due to the heat generated during operation. Overall, FDA24N50F is a reliable choice for designers needing a robust semiconductor device for high-voltage switching applications.

Features

The FDA24N50F is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It can handle drain-source voltages up to 500V, making it suitable for high-voltage applications.
2. Current Rating: The device supports continuous drain current up to 24A, allowing for significant load handling.
3. Low On-Resistance: With a low R_DS(on) of approximately 0.5 ohms, it enhances efficiency by minimizing power loss during operation.
4. Fast Switching Speed: Designed for high-speed switching applications, it enables improved performance in power conversion circuits.
5. Thermal Performance: It has a thermal resistance rating that allows it to operate effectively at elevated temperatures.
6. Package Type: Typically offered in TO-220 or similar packages, facilitating easy heat dissipation and installation.
These characteristics make the FDA24N50F suitable for use in power supplies, motor controllers, and other high-efficiency electronic circuits.

Package

The FDA24N50F is typically packaged in a TO-220 form factor, which is a standard package type for power devices that allows for efficient heat dissipation and easy mounting on heatsinks.

Pinout

The FDA24N50F is a power MOSFET with a total of 3 pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This pin is where the load is connected. It carries the current from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, allowing current to flow from the drain to the source when the gate is activated.
The FDA24N50F is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 500V and operates in various electronic devices for switching and amplification purposes.

Manufacturer

The FDA24N50F is manufactured by Fairchild Semiconductor, a company that specializes in designing and manufacturing semiconductor products. Fairchild Semiconductor is known for its innovation in the semiconductor industry, producing a wide range of components including power transistors, diodes, and integrated circuits. The company focuses on high-performance solutions for various applications, including automotive, industrial, and consumer electronics. Fairchild was founded in 1957 and has contributed significantly to the development of semiconductor technology. It was acquired by ON Semiconductor in 2016, expanding its portfolio and capabilities in the semiconductor market.

Application

The FDA24N50F is a high-performance IGBT (Insulated Gate Bipolar Transistor) used in various applications, including motor drives, power converters, and renewable energy systems such as solar inverters. Its capabilities make it suitable for industrial automation, electric vehicles, and power supplies, allowing for efficient control of high-voltage and high-current operations.

Equivalent

The FDA24N50F is a power MOSFET. Equivalent products include:
1. STP24NM50
2. IRF240
3. FQP24N50
4. MTP24N50
5. NTE2358
Always verify specifications (voltage, current, Rds(on), package type) to ensure compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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