FCPF190N60

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FCPF190N60

MOSFET N-CH 600V 20.2A TO220F

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Spécifications

Supplier onsemi
Package Tube
Series SuperFET® II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 20.2A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 199mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 74 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2950 pF @ 25 V
PowerDissipation(Max) 39W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220F-3

Vue d'ensemble

Description

FCPF190N60 is a specific model of IGBT (Insulated Gate Bipolar Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications, commonly used in industrial and automotive systems. The key features of the FCPF190N60 include its high voltage rating of 600V and current rating of 190A, making it suitable for demanding applications such as motor drives, power inverters, and renewable energy systems.
The device offers low conduction and switching losses, which enhances overall efficiency and thermal performance. Its robust construction ensures reliability under high-temperature conditions, contributing to a longer operational lifespan. The FCPF190N60 integrates advanced technology for fast switching speeds, which is essential for applications requiring precise control and rapid response.
Overall, the FCPF190N60 is an effective solution for engineers seeking reliable and efficient power management components in various electronic systems.

Features

The FCPF190N60 is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: The continuous drain current (Id) is rated at 190A, enabling it to handle substantial loads.
3. RDS(on): It offers a low on-resistance (RDS(on)), typically around 0.19Ω, which minimizes power losses during operation.
4. Fast Switching: The device supports high-speed switching, improving efficiency in circuits such as converters and inverters.
5. Thermal Performance: It features a robust thermal design, allowing for efficient heat dissipation and reliable operation at high temperatures.
6. Package Type: Available in a TO-247 package, which provides good thermal conductivity and ease of mounting.
These attributes make the FCPF190N60 suitable for applications in renewable energy systems, industrial motor drives, and power supply circuits.

Package

The FCPF190N60 is typically packaged in a TO-220 package type. This package is designed for power transistors and offers excellent thermal performance and heat dissipation capabilities.

Pinout

The FCPF190N60 is a MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-voltage applications. It typically has a TO-220 package, which commonly features three pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate allows or prevents current flow between the drain and source.

2. Drain (D): This pin is connected to the higher potential side of the circuit. It is where the load current flows out of the device when it is turned on.

3. Source (S): This pin connects to the lower potential side of the circuit and serves as the return path for the load current.
The FCPF190N60 is rated for a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of around 190A, making it suitable for applications such as power supplies, motor drives, and other high-voltage switching applications.

Manufacturer

The FCPF190N60 is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and discrete components, serving various industries such as automotive, industrial, and consumer electronics. The company focuses on innovation and sustainability, providing efficient and high-performance semiconductor solutions to meet the needs of its diverse customer base.

Application

The FCPF190N60 is a power MOSFET primarily used in applications such as power conversion systems, motor drives, and industrial power supplies. Its high voltage and current ratings make it suitable for switching applications in renewable energy systems like solar inverters and wind turbine controllers. Additionally, it is commonly employed in electric vehicles and various electronic devices requiring efficient power management.

Equivalent

The FCPF190N60 is an N-channel MOSFET. Equivalent products include the STP190N60, IRF190N60, and MTP190N60. Ensure to check specifications like voltage, current ratings, and Rds(on) for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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