FCP380N60E

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FCP380N60E

MOSFET N-CH 600V 10.2A TO220-3

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  • Mfr. Partie #FCP380N60E
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Spécifications

Series SuperFET® II
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1770 pF @ 25 V
Power Dissipation (Max) 106W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3

Vue d'ensemble

Description

The FCP380N60E is a high-performance insulated gate bipolar transistor (IGBT) designed for use in power electronic applications. This device features a maximum collector-emitter voltage (Vce) of 600V and a continuous collector current (Ic) rating of 380A, making it suitable for high-voltage and high-current applications. Its fast switching capabilities and low conduction losses enhance efficiency in applications such as motor drives, inverters, and power supplies.
The FCP380N60E typically includes features like a built-in diode for reverse conduction, facilitating efficient operation in circuits that involve switching or PWM (pulse-width modulation) control. Its robust construction allows for reliable performance under high thermal and electrical stress. Additionally, the device is housed in a TO-247 package, which aids in effective heat dissipation.
Overall, the FCP380N60E is ideal for industrial applications where performance, efficiency, and reliability are critical.

Features

The FCP380N60E is a high-performance N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: 600V maximum drain-source voltage, suitable for high-voltage applications.
2. Continuous Drain Current: 380A, allowing for substantial current handling.
3. RDS(on): Low on-resistance (typically around 0.25Ω), which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: High switching performance, enabling efficient operation in switching applications.
5. Thermal Management: The device is capable of withstanding high temperatures, enhancing reliability in demanding environments.
6. TO-247 Package: Robust packaging that ensures effective heat dissipation.
7. Applications: Ideal for power supplies, motor drives, and industrial equipment.
These features make the FCP380N60E a versatile choice for engineers seeking efficient and reliable components in their designs.

Package

The FCP380N60E is typically packaged in a TO-220 package type, which is designed for efficient heat dissipation and suitable for power applications.

Pinout

The FCP380N60E is a power MOSFET manufactured by Fairchild Semiconductor (now part of ON Semiconductor). It features a total of 3 pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET's on/off state.
2. Drain (D): This pin connects to the load and carries the current when the MOSFET is on.
3. Source (S): This pin is connected to ground or the negative side of the circuit.
The FCP380N60E is designed for high-voltage applications with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 380A. It's commonly used in power conversion, motor control, and industrial applications. The device operates efficiently in switching applications, providing low on-resistance and fast switching capabilities.

Manufacturer

The FCP380N60E is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products, including power transistors, diodes, and integrated circuits. Fairchild Semiconductor specializes in developing solutions for power management, signal conditioning, and other electronic applications. Founded in 1957, the company has a strong presence in the semiconductor industry and serves various markets, including automotive, industrial, and consumer electronics. Fairchild was acquired by ON Semiconductor in 2016, further enhancing its capabilities and product offerings in the semiconductor space.

Application

The FCP380N60E is a high-voltage N-channel MOSFET primarily used in power electronics applications, including switch-mode power supplies, motor drives, DC-DC converters, and inverters. Its robust switching capabilities make it suitable for applications in renewable energy systems, electric vehicles, and industrial automation. Additionally, it is used in lighting control and power management systems where efficient energy conversion and thermal performance are crucial.

Equivalent

The FCP380N60E is a 600V, 38A IGBT. Equivalent products include:
1. IRG4BC30KD - 600V, 30A IGBT
2. MGF30N60E - 600V, 30A IGBT
3. FGA25N60 - 600V, 25A IGBT
4. STGW30NC60 - 600V, 30A IGBT
Always verify specifications and packaging compatibility for your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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