FCP104N60F

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FCP104N60F

MOSFET N-CH 600V 37A TO220-3

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Spécifications

Package Tube
Series HiPerFET™, Polar™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 37A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 104mOhm @ 18.5A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 145 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6130 pF @ 25 V
PowerDissipation(Max) 357W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220-3

Vue d'ensemble

Description

The FCP104N60F is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-voltage applications. It features a maximum drain-source voltage (V_DS) of 600V, a continuous drain current (I_D) of 104A, and low on-resistance (R_DS(on)), which enhances its efficiency in power conversion and switching applications.
This MOSFET is commonly used in various applications, including power supplies, motor drives, and inverters due to its high efficiency and thermal stability. The device is housed in a TO-220 package, which allows for effective heat dissipation.
The FCP104N60F is particularly suitable for applications requiring fast switching speeds and reliability, such as renewable energy systems and industrial automation. Its robust performance characteristics enable it to handle demanding electrical conditions while minimizing energy losses.

Features

The FCP104N60F is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling a continuous drain current (Id) of 104A, providing robustness for demanding tasks.
3. Rds(on): It boasts a low on-resistance (Rds(on)) of approximately 0.18 ohms, which enhances efficiency by reducing conduction losses.
4. Gate Threshold Voltage: The typical gate threshold voltage (Vgs(th)) ranges from 2V to 4V, allowing for easy interfacing with various drive circuits.
5. Fast Switching Speed: The device supports rapid switching, which is beneficial for applications like converters and inverters.
6. Package Type: Available in a TO-220 package, facilitating efficient heat dissipation and easy mounting.
These features make the FCP104N60F ideal for use in power supplies, motor drives, and other high-efficiency applications.

Package

The FCP104N60F is typically packaged in a TO-220 form factor. This package type provides efficient thermal management and is suitable for high-power applications.

Pinout

The FCP104N60F is an N-channel MOSFET designed for high-voltage applications. It typically comes in a TO-220 package, featuring three pins.
Pin Count and Functions:
1. Gate (G): Controls the MOSFET's switching operation. A positive voltage applied to the gate turns the device on.
2. Drain (D): The output terminal where the load is connected. It carries the current from the load to the source when the MOSFET is on.
3. Source (S): The terminal connected to the ground or negative side of the power supply. It completes the circuit for the current flow.
This MOSFET is rated for 600V and has a continuous drain current capacity of 104A, making it suitable for applications such as power supplies and motor controls.

Manufacturer

The FCP104N60F is manufactured by Fairchild Semiconductor, which is now part of ON Semiconductor following its acquisition in 2016. Fairchild Semiconductor was known for producing a wide range of semiconductor devices, including power transistors, integrated circuits, and diodes. The FCP104N60F is a power MOSFET designed for use in high-voltage applications, featuring a breakdown voltage of 600V and low on-resistance, making it suitable for power management and switching applications. As a company, Fairchild specialized in analog and mixed-signal technologies, focusing on providing solutions for consumer electronics, automotive, and industrial markets.

Application

The FCP104N60F is a high-voltage, N-channel MOSFET widely used in various applications, including power supplies, motor drives, inverters, and automotive systems. Its features make it suitable for switching functions in energy-efficient systems, such as power converters, DC-DC converters, and LED drivers. Additionally, it's utilized in industrial automation and control circuits due to its ability to handle high currents and voltages.

Equivalent

The FCP104N60F is a N-channel MOSFET. Equivalent products include the STP104N60F, IRF840, and MTP104N60E. When choosing a substitute, ensure that voltage, current ratings, and package types match your application requirements. Always refer to the datasheets for precise specifications.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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