FCMT099N65S3

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FCMT099N65S3

MOSFET N-CH 650V 30A POWER88

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  • Mfr. Partie #FCMT099N65S3
  • Paquet PQFN-4
  • Fiche de données
  • En stock4735

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperFET® III
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 99mOhm @ 15A, 10V
Vgs(th)(Max)@Id 4.5V @ 3mA
GateCharge(Qg)(Max)@Vgs 56 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2270 pF @ 400 V
PowerDissipation(Max) 227W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage Power88

Vue d'ensemble

Description

FCMT099N65S3 is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), designed for high-efficiency switching applications. It is typically used in power management systems, DC-DC converters, and motor control circuits. The "N" indicates it's an N-channel MOSFET, which allows for efficient conduction when a positive voltage is applied to the gate.
Key specifications often include its voltage and current ratings, which determine its suitability for various applications. The "65" in the model number typically refers to the maximum voltage rating (e.g., 65V), while the "3" may indicate specific package characteristics or features.
These MOSFETs are favored for their low on-resistance, fast switching speeds, and high thermal stability, making them essential components in modern electronic circuits. When selecting a MOSFET like the FCMT099N65S3, engineers consider parameters such as gate threshold voltage, R_DS(on) (on-resistance), and total gate charge to ensure optimal performance in their specific application.

Features

The FCMT099N65S3 is a N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 99A, providing robust performance in demanding environments.
3. R_DS(on): Low on-resistance typically around 0.099 ohms, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for easy drive with standard logic levels.
5. Package Type: Available in a TO-247 package, facilitating effective heat dissipation and easy mounting in thermal management applications.
6. Fast Switching: Designed for efficient operation at high frequencies, making it suitable for switch-mode power supplies and inverters.
7. Temperature Range: Operational temperature typically from -55°C to 150°C, enhancing reliability in extreme conditions.
These features make the FCMT099N65S3 ideal for use in applications such as power supplies, motor drives, and other high-power circuits.

Package

The FCMT099N65S3 is typically packaged in a TO-247 or similar high-power package type, designed for efficient heat dissipation and high-performance applications. This package is suitable for power transistors and modules in various electronic circuits.

Pinout

The FCMT099N65S3 is a power MOSFET with a total of 8 pins. Its primary function is to serve as a high-efficiency switch in power management applications, such as in converters and inverters. The pins include:
1. Gate (G) - Controls the MOSFET's switching operation.
2. Drain (D) - The terminal through which the load current flows out.
3. Source (S) - The terminal that connects to the ground or lower potential.
The specific pin configuration and functions may vary, so it's essential to refer to the manufacturer's datasheet for detailed specifications and pin assignments. This device is typically used in applications requiring high voltage handling and low on-resistance to enhance performance and efficiency.

Manufacturer

The FCMT099N65S3 is manufactured by ON Semiconductor, a global company that specializes in semiconductor solutions. ON Semiconductor designs and manufactures a wide range of products, including power management, analog, digital, and mixed-signal integrated circuits. The company serves various industries such as automotive, industrial, telecommunications, and consumer electronics. Founded in 1999, ON Semiconductor has grown through both organic development and strategic acquisitions, positioning itself as a key player in the semiconductor industry.

Application

The FCMT099N65S3 is a high-performance power MOSFET primarily used in applications such as automotive power management, industrial motor drives, power supplies, and renewable energy systems. Its features make it suitable for high-efficiency switching applications, including DC-DC converters, inverters, and electric vehicle systems, where low on-resistance and fast switching speeds are essential for performance and energy savings.

Equivalent

The FCMT099N65S3 is a 650V N-channel MOSFET. Equivalent products include the Infineon IPP99N65T, STMicroelectronics STP99N65M5, and ON Semiconductor MTP99N65. Always verify specifications like RDS(on), VGS, and package type to ensure compatibility for your specific application.

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