FCH041N60F

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FCH041N60F

POWER FIELD-EFFECT TRANSISTOR, 7

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Spécifications

Package Bulk
Series SuperFET® II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V
Current-ContinuousDrain(Id)@25°C 76A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 41mOhm @ 38A, 10V
Vgs(th)(Max)@Id 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 360 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 14365 pF @ 100 V
PowerDissipation(Max) 595W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-3

Vue d'ensemble

Description

The FCH041N60F is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 41A, making it suitable for high-voltage environments. With a low on-resistance (R_DS(on)), typically around 0.045 ohms, it helps minimize conduction losses, improving overall efficiency in circuits.
The device is built using advanced technology, ensuring fast switching speeds, which is crucial for applications like power supplies, motor controls, and inverters. Its TO-220 package allows for efficient thermal dissipation, enabling reliable operation under high loads.
The FCH041N60F is ideal for designers seeking reliability and performance in demanding applications, with robust protection features against thermal runaway and overcurrent conditions.

Features

The FCH041N60F is a power MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: 600V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Up to 41A, allowing for robust performance in power management.
3. Low RDS(on): Approximately 0.041 ohms, which reduces conduction losses and improves efficiency.
4. Fast Switching Speed: Facilitates rapid switching, beneficial for applications like DC-DC converters and power inverters.
5. Thermal Resistance: Low thermal resistance helps in managing heat dissipation effectively.
6. Package Type: Available in a TO-220 package, which aids in effective heat sinking and mounting.
These features make the FCH041N60F ideal for use in industrial power applications, renewable energy systems, and consumer electronics where high performance and reliability are critical.

Package

The FCH041N60F is typically packaged in a TO-220 form factor, which is a common package type for power MOSFETs. This package provides good thermal performance and is suitable for various applications requiring efficient power management.

Pinout

The FCH041N60F is a high-performance N-channel MOSFET with a pin count of 3. Its pin configuration typically includes:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal that connects to ground or the source of the current.
This MOSFET is designed for high voltage applications, with a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 41A. It features low on-resistance (R_DS(on)), making it suitable for power switching and conversion applications in industrial and consumer electronics.

Manufacturer

The FCH041N60F is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products, including power MOSFETs, diodes, and analog components. Fairchild Semiconductor specializes in providing solutions for various applications such as automotive, industrial, and consumer electronics.
Founded in 1957, the company has a long history in the semiconductor industry and was one of the pioneers in developing silicon-based technology. Fairchild Semiconductor was acquired by ON Semiconductor in 2016, which further expanded its capabilities and product offerings. The company focuses on innovation and efficiency in semiconductor design and manufacturing, catering to the growing demand for power management solutions in modern electronic devices.

Application

The FCH041N60F is a high-voltage N-channel MOSFET primarily used in power management applications. Its key areas include switching power supplies, DC-DC converters, motor drives, and inverters for renewable energy systems. It is also utilized in industrial automation, automotive power systems, and consumer electronics due to its efficiency and thermal performance.

Equivalent

The FCH041N60F is a 600V, 41A N-channel MOSFET. Equivalent products include:
1. IRF841
2. STP41NF60
3. MTP41N60
4. AUIRF841N
Always verify specifications such as RDS(on), gate charge, and thermal characteristics for specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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