FCD260N65S3

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FCD260N65S3

MOSFET N-CH 650V 12A TO252

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Spécifications

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series SuperFET® III
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 260mOhm @ 6A, 10V
Vgs(th)(Max)@Id 4.5V @ 1.2mA
GateCharge(Qg)(Max)@Vgs 24 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 1010 pF @ 400 V
PowerDissipation(Max) 90W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

The FCD260N65S3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) rating of 260A, making it suitable for high-voltage and high-current environments.
Key specifications include low on-state resistance (R_DS(on)), which minimizes power losses during operation, and fast switching capabilities that enhance efficiency in switching applications. The device is typically used in power supplies, motor drives, and renewable energy systems, such as solar inverters.
The FCD260N65S3 is housed in a TO-220 package, which facilitates effective thermal management and easy mounting on heatsinks. Its robust design ensures reliability in demanding conditions, making it a popular choice among engineers in the power electronics industry.

Features

The FCD260N65S3 is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: 650V, making it suitable for high-voltage applications.
2. Current Rating: Continuous drain current of up to 260A, allowing for significant power handling.
3. RDS(on): Low on-resistance of approximately 0.16 ohms, which reduces conduction losses and improves efficiency.
4. Gate Threshold Voltage: Typically between 2-4V, facilitating easier drive requirements.
5. Fast Switching: Enhanced switching speeds ideal for applications in power converters, inverters, and motor drives.
6. Package Type: Available in TO-247 or similar packages, providing robust thermal performance.
7. High Thermal Stability: Designed to operate in demanding environments with adequate thermal management.
These features make the FCD260N65S3 suitable for various applications, including renewable energy systems and industrial power supplies.

Package

The FCD260N65S3 is packaged in a TO-247 casing, which is a popular format for high-power MOSFETs. This package type offers efficient thermal performance and is suitable for applications requiring significant power handling.

Pinout

The FCD260N65S3 is a N-channel MOSFET with a pin count of 4. Its typical functions include high-efficiency switching applications, suitable for use in power management, DC-DC converters, and motor control.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching state.
2. Drain (D): The output where the load is connected.
3. Source (S): Connects to the ground or negative terminal.
The FCD260N65S3 features a voltage rating of 650V and a continuous drain current of 260A, making it suitable for high-voltage applications. Its low R_DS(on) ensures reduced power loss and improved thermal performance.

Manufacturer

The FCD260N65S3 is manufactured by Fairchild Semiconductor, a company known for producing a wide range of semiconductor products. Fairchild Semiconductor specializes in devices such as power transistors, integrated circuits, and other components used in various electronic applications. Established in 1957, it has played a significant role in the development of the semiconductor industry and is recognized for its innovation and contributions to technology. In 2016, Fairchild Semiconductor was acquired by ON Semiconductor, expanding its portfolio and capabilities in the semiconductor market.

Application

The FCD260N65S3 is a 650V N-channel MOSFET commonly used in applications such as power supplies, motor drives, industrial automation, and renewable energy systems. Its low on-resistance and fast switching capabilities make it suitable for DC-DC converters, inverters, and audio amplifiers, enhancing efficiency and performance in various electronic circuits.

Equivalent

The FCD260N65S3 is a power MOSFET, and equivalent products include the Infineon IRF260N65, STMicroelectronics STP260N65, and ON Semiconductor NTD260N65. Always verify specifications such as voltage, current ratings, and thermal characteristics to ensure compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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