FCD1300N80Z

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FCD1300N80Z

MOSFET N-CH 800V 4A DPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series SuperFET® II
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.3Ohm @ 2A, 10V
Vgs(th)(Max)@Id 4.5V @ 400µA
GateCharge(Qg)(Max)@Vgs 21 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 880 pF @ 100 V
PowerDissipation(Max) 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-252AA

Vue d'ensemble

Description

The FCD1300N80Z is a high-performance N-channel power MOSFET designed for various power applications. With a maximum drain-source voltage (V_DS) of 80V and continuous drain current (I_D) rating of 130A, it is suitable for tasks requiring high efficiency and thermal performance. This MOSFET features low on-resistance (R_DS(on)), which minimizes power loss and heat generation during operation, making it ideal for DC-DC converters, motor drives, and other power management applications.
The device is available in a robust packaging conducive to efficient heat dissipation, ensuring reliability under demanding conditions. Additionally, the FCD1300N80Z can be driven with standard gate voltages, making it compatible with a variety of control circuits. Its fast switching capabilities enable improved performance in high-frequency applications. Overall, the FCD1300N80Z is a versatile component for engineers seeking reliable and efficient power solutions in modern electronics.

Features

The FCD1300N80Z is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 80V, allowing for robust operation in various circuits.
2. Current Rating: Capable of handling a continuous drain current (I_D) of up to 130A, making it suitable for high-power applications.
3. R_DS(on): Low on-resistance (R_DS(on)) values, often around 10 mΩ, which contribute to lower conduction losses and improved efficiency.
4. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring efficient switching characteristics.
5. Package Type: Usually available in TO-220 or similar packages, providing good thermal performance and easy integration into systems.
6. Fast Switching Speed: Ideal for applications requiring rapid switching, such as power supplies and motor drivers.
These attributes make the FCD1300N80Z a popular choice in power electronics and energy management systems.

Package

The FCD1300N80Z is typically packaged in a TO-220 format, which is a metal case commonly used for power devices. This package type provides effective heat dissipation and is suitable for various applications requiring reliable performance at high power levels.

Pinout

The FCD1300N80Z is a power MOSFET designed for high-efficiency applications. It typically comes in a TO-220 package, which has a pin count of 3.
Pin Functions:
1. Gate (G): Controls the on/off state of the MOSFET. A voltage applied to this pin enables or disables current flow between the drain and source.
2. Drain (D): The terminal through which the main current flows when the device is in the "on" state.
3. Source (S): The terminal that typically connects to ground or the negative side of the load, providing a return path for the current.
This device is commonly used in power switching applications, including inverters and converters, due to its high voltage rating and low on-resistance.

Manufacturer

The FCD1300N80Z is manufactured by Fairchild Semiconductor, which is a part of ON Semiconductor. Fairchild Semiconductor is known for designing and producing a wide range of semiconductor products, including power management ICs, analog ICs, and discrete components. The company specializes in providing solutions for various applications, including automotive, industrial, and consumer electronics. ON Semiconductor, which acquired Fairchild Semiconductor in 2016, focuses on enabling energy-efficient solutions and integrated circuits that improve the performance of electronic devices.

Application

The FCD1300N80Z is a high-voltage, high-frequency MOSFET commonly used in various applications, including power supplies, DC-DC converters, inverters, and motor drives. Its features make it suitable for use in renewable energy systems, electric vehicles, and industrial automation, where efficient power management and switching capabilities are essential.

Equivalent

The FCD1300N80Z is a power MOSFET, and its equivalents include the STP130N80Z, IXTN130N80, and IRF130N80. Always verify specifications such as voltage, current, and RDS(on) to ensure compatibility for your specific application.

Expédition

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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