EPC23104ENGRT

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EPC23104ENGRT

IC GAN EPOWER STAGE 100V 10A

  • Fabricant
  • Mfr. Partie #EPC23104ENGRT
  • Paquet
  • Fiche de données
  • En stock2797

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Spécifications

Series ePower™
Part Status Active
Output Configuration Half Bridge
Applications DC Motors, DC-DC Converters
Interface Logic
Load Type Capacitive and Resistive
Technology Gallium Nitride (GaN) FETs
Rds On (Typ) 7.6mOhm LS + HS
Current - Output / Channel 15A
Current - Peak Output 78A
Voltage - Supply 10V ~ 80V
Voltage - Load 10V ~ 80V
Operating Temperature -40°C ~ 125°C (TJ)
Features Bootstrap Circuit, Slew Rate Controlled
Fault Protection ESD, Over Voltage, Short Circuit
Mounting Type Surface Mount, Wettable Flank
Package / Case 13-PowerWFQFN
Supplier Device Package 13-WQFN-HR (3.5x5)
Base Product Number EPC23104

Vue d'ensemble

Description

"EPC23104ENGRT" appears to be a course code, likely related to engineering or a technical field. However, without specific details on the course curriculum, I can only provide a general introduction.
EPC23104ENGRT could be an introductory course designed to familiarize students with foundational concepts in engineering. Such a course might cover basic principles of engineering design, analysis, and problem-solving. It may also introduce students to various engineering disciplines, such as mechanical, electrical, civil, or chemical engineering, and provide an overview of essential tools and technologies used in the field.
Students might engage in hands-on projects, collaborative work, and case studies to apply theoretical knowledge to real-world scenarios. The course could also emphasize the development of critical thinking, communication, and technical skills necessary for success in advanced engineering studies or professional practice.
For specific information, such as course prerequisites, learning objectives, and assessment methods, please refer to the syllabus or course description provided by the educational institution offering EPC23104ENGRT.

Features

The EPC23104ENGRT is an enhancement-mode gallium nitride (eGaN) transistor from Efficient Power Conversion (EPC). It is designed for high-performance power conversion applications and offers several key features:
1. High Efficiency: The EPC23104 provides high efficiency due to its low RDS(on) and fast switching capabilities, which reduce power losses during operation.
2. High Frequency: Capable of operating at high frequencies, making it suitable for applications like wireless power transfer, lidar, and high-frequency DC-DC converters.
3. Low On-Resistance: It features a very low on-resistance for its size, which contributes to reduced conduction losses.
4. Small Footprint: The transistor comes in a compact package, allowing for space-saving designs in power electronics.
5. Robust Performance: It is designed to handle high power levels and has a high breakdown voltage, ensuring reliability in demanding applications.
6. Thermal Management: The design of the EPC23104 allows for effective thermal management, which is critical in maintaining performance and longevity in high-power environments.
These features make the EPC23104ENGRT suitable for cutting-edge applications in consumer electronics, automotive, and industrial sectors.

Package

The EPC23104ENGRT is a product from Efficient Power Conversion Corporation and comes in a wafer-level chip-scale package (WL-CSP). This package type is known for its reduced size, low inductance, and enhanced thermal performance, making it suitable for high-frequency power conversion applications.

Manufacturer

The EPC23104ENGRT is manufactured by Efficient Power Conversion Corporation (EPC). EPC is a company that specializes in the development and production of Gallium Nitride (GaN) based power management technology. They focus on providing high-efficiency power conversion solutions that are used across a variety of applications, including consumer electronics, telecommunications, automotive, and industrial systems. EPC's GaN technology is known for its efficiency, high performance, and compact size, making it a preferred choice for modern power electronics.

Application

The EPC23104ENGRT is a GaN FET from EPC (Efficient Power Conversion). Its application areas include high-frequency DC-DC converters, wireless power transfer systems, lidar for autonomous vehicles, RF envelope tracking, motor drives, and Class-D audio amplifiers. Its high efficiency and fast switching speeds make it ideal for power-sensitive and high-performance electronics.

Equivalent

The EPC23104ENGRT chip is a GaN transistor from Efficient Power Conversion. Equivalent products would be other GaN transistors with similar specifications from different manufacturers. Possible equivalents include GaN Systems' GS-065-011-1-L and Transphorm's TPH3212PSB. These alternatives should have similar voltage ratings, current capabilities, and switching characteristics. Always consult datasheets and check compatibility with your specific application requirements before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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