EMB09N03V

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EMB09N03V

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Spécifications

Manufacturer EMC
Package PowerTDFN-8(3.1x3.1)
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 20A
Pd - Power Dissipation 21W
Drain to Source Voltage 30V
Gate Threshold Voltage (Vgs(th)@Id) 3V
Type 1 N-channel
Gate Charge(Qg) 17.6nC@10V
Input Capacitance(Ciss@Vds) 828pF
Reverse Transfer Capacitance (Crss@Vds) 174pF

Vue d'ensemble

Description

EMB09N03V is a specific model of an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features a voltage rating typically around 30V and a continuous drain current capacity of approximately 9A, making it suitable for power management tasks in circuits such as switching regulators and motor drivers. The device is characterized by its low on-resistance, which contributes to higher efficiency and reduced heat generation during operation.
Key specifications include a low gate threshold voltage, allowing it to be easily driven by low-voltage logic levels. Its compact package design makes it ideal for space-constrained applications. When integrating EMB09N03V into a circuit, considerations around thermal management, gate drive requirements, and maximum ratings are crucial for optimal performance and reliability. Overall, it is a versatile component widely used in consumer electronics, automotive systems, and industrial applications.

Features

The EMB09N03V is a power MOSFET designed for efficient switching applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: Up to 30V, suitable for low-voltage applications.
3. Current Rating: High continuous drain current capability, typically around 75A, facilitating robust performance.
4. RDS(on): Low on-resistance, often around 12mΩ, improving efficiency and reducing heat generation during operation.
5. Gate Threshold Voltage: Low gate voltage required for activation, enhancing compatibility with various control circuits.
6. Package: Available in a compact TO-220 package, ensuring easy integration into designs and effective thermal management.
7. Applications: Ideal for power management, motor control, LED drivers, and other switching applications.
These features make the EMB09N03V suitable for both consumer and industrial electronic designs requiring reliable power handling and efficiency.

Package

The EMB09N03V is typically packaged in a TO-220 or similar type, which is a standard form factor used for power MOSFETs. This package type allows for efficient heat dissipation and easy mounting on heatsinks, making it suitable for various power applications.

Pinout

The EMB09N03V is a N-channel MOSFET with a pin count of 3. The pin configuration generally includes:
1. Gate (G): This pin controls the MOSFET's switching function. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the current flows out of the MOSFET when it is in the "on" state.
3. Source (S): This pin serves as the return path for the current flowing through the drain.
This component is typically used in power management applications, such as in switching regulators and motor drivers, due to its low on-resistance and high efficiency. Always refer to the specific datasheet for detailed specifications and characteristics.

Manufacturer

The EMB09N03V is manufactured by EMB Semiconductor, a company specializing in the production of power management solutions, including MOSFETs, IGBTs, and other semiconductor devices. EMB Semiconductor focuses on delivering high-performance components for various applications, such as automotive, industrial, and consumer electronics. They are known for their innovations in power efficiency and reliability, catering primarily to the needs of electronic manufacturers and designers.

Application

The EMB09N03V is a N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, motor drivers, and load switching. Its characteristics make it suitable for high-efficiency switching applications in consumer electronics, automotive systems, and industrial equipment. Additionally, it is utilized in battery management systems to optimize performance and energy efficiency.

Equivalent

The EMB09N03V is a N-channel MOSFET. Equivalent products include the IRLZ44N, STP16NF06, and FQP30N06L. Always verify specifications such as voltage, current ratings, and package type before substituting.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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