DMN61D9UDW-7

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DMN61D9UDW-7

MOSFET 2N-CH 60V 0.35A

  • Fabricant
  • Mfr. Partie #DMN61D9UDW-7
  • Paquet TSSOP-6
  • Fiche de données
  • En stock5422

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 350mA
RdsOn(Max)@IdVgs 2Ohm @ 50mA, 5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.4nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 28.5pF @ 30V
Power-Max 320mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Vue d'ensemble

Description

DMN61D9UDW-7 is a specific model of a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It features low on-resistance, making it ideal for applications in power management, motor control, and switching circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 9A, and a low gate threshold voltage, which allows for efficient operation in low-voltage applications. The device is packaged in a compact SO-8 format, facilitating space-saving designs in electronic circuits.
DMN61D9UDW-7 is commonly used in automotive, industrial, and consumer electronics due to its reliability and performance. Its high efficiency reduces power loss, contributing to better thermal management in devices. Overall, it serves as a critical component in various electronic designs requiring efficient switching capabilities.

Features

The DMN61D9UDW-7 is a versatile and efficient DMOS power MOSFET designed for various applications. Key features include:
1. Voltage Rating: It typically has a high breakdown voltage, making it suitable for high-voltage applications.
2. Low On-Resistance: This characteristic reduces power losses and enhances overall efficiency in circuits.
3. High-Speed Switching: Capable of rapid switching, it is ideal for applications requiring quick response times.
4. Thermal Performance: Designed to handle significant heat dissipation, which is crucial for reliability in demanding environments.
5. Package Type: Often available in compact packages, facilitating space-efficient designs.
6. Gate Threshold Voltage: Optimized for compatibility with various gate drive voltages, providing design flexibility.
These features make the DMN61D9UDW-7 suitable for applications in power management, automotive systems, and electronic devices requiring efficient power handling.

Package

The DMN61D9UDW-7 is packaged in a surface mount device (SMD) format, specifically in a SO-8 package. This allows for efficient mounting on printed circuit boards, facilitating space-saving designs in electronic applications.

Pinout

The DMN61D9UDW-7 is a N-channel MOSFET in a surface mount package. It typically features a pin count of 8 pins. The primary functions of this device include acting as a switch for electronic circuits, enabling efficient control of power and signal applications. It is designed for low voltage and low on-resistance operation, making it suitable for applications such as power management, load switching, and signal routing. The MOSFET operates with a maximum drain-source voltage of 60V and a continuous drain current rating of 30A. Its compact size and performance characteristics make it ideal for use in consumer electronics, automotive applications, and power supply circuits.

Manufacturer

The DMN61D9UDW-7 is manufactured by Diodes Incorporated, a global supplier of high-quality semiconductor products. Diodes Incorporated specializes in developing and manufacturing a wide range of discrete, analog, and mixed-signal semiconductors, which are used in various applications, including consumer electronics, automotive systems, and industrial equipment. The company is known for its focus on providing innovative solutions and reliable performance in the semiconductor industry.

Application

The DMN61D9UDW-7 is a dual N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor control, and load switching. It is suitable for low-voltage applications, offering efficient switching and thermal performance. Its compact package allows for integration in space-constrained designs, making it ideal for consumer electronics, automotive, and industrial automation applications.

Equivalent

The DMN61D9UDW-7 is a dual N-channel MOSFET. Equivalent products include the BSS138, BSS84, and DMN61D9UDW, depending on specific requirements like voltage rating and package type. Always check the datasheets for precise specifications to ensure compatibility in your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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