DMN3065LW-7

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DMN3065LW-7

MOSFET N-CH 30V 4A SOT-323

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Spécifications

Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V
RdsOn(Max)@IdVgs 52mOhm @ 4A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 11.7 nC @ 10 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 465 pF @ 15 V
PowerDissipation(Max) 770mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-323

Vue d'ensemble

Description

DMN3065LW-7 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) known for its low on-resistance and fast switching capabilities. It is designed for various applications, including power management, switching power supplies, and motor control. With a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) rating of up to 30A, it provides robust performance in demanding environments.
The device features a low gate threshold voltage, enabling efficient operation at lower voltage levels. Its compact package makes it ideal for space-constrained applications while ensuring effective thermal management. The DMN3065LW-7 is often favored in designs requiring high efficiency and reliability. Additionally, it is compatible with standard gate drive circuits, making integration into existing systems straightforward. Overall, this MOSFET is a versatile choice for engineers seeking high-performance solutions in electronic circuits.

Features

The DMN3065LW-7 is an N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, suitable for low voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 65A, allowing efficient power handling.
3. RDS(on): The on-resistance is low, typically around 10 mΩ, which minimizes power loss during operation.
4. Package Type: It comes in a DPAK package, providing a compact footprint and efficient thermal performance.
5. Fast Switching: The device is designed for fast switching applications, enhancing efficiency in power management circuits.
6. Applications: Commonly used in power conversion, motor control, and battery management systems.
Overall, the DMN3065LW-7 is favored for its reliability, efficiency, and suitability for high-performance applications in consumer electronics and industrial devices.

Package

The DMN3065LW-7 is packaged in a Surface Mount Device (SMD) format, specifically in the SO-8 package type. This compact package is designed for efficient use in space-constrained applications.

Pinout

The DMN3065LW-7 is an N-channel MOSFET with a total of 8 pins. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects to the load and allows current to flow when the MOSFET is on.
3. Source (S): The terminal through which current exits the MOSFET when it is on.
The MOSFET is designed for switching and amplifying applications, with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 19A. It features low on-resistance, making it suitable for power management in various electronic devices.
For further details, refer to the manufacturer's datasheet.

Manufacturer

The DMN3065LW-7 is manufactured by Diodes Incorporated, a company that specializes in the design, development, and manufacturing of a wide range of semiconductor products. Diodes Incorporated primarily focuses on discrete, analog, and mixed-signal semiconductor solutions for various markets, including consumer electronics, automotive, industrial, and communications. Established in 1950, the company has a global presence and is known for its commitment to innovation and high-quality products. The DMN3065LW-7 is a N-channel MOSFET, commonly used in power management and switching applications.

Application

The DMN3065LW-7 is a N-channel MOSFET primarily used in power management applications. Its key areas include switching power supplies, DC-DC converters, motor control, and portable electronic devices. Its high efficiency and low on-resistance make it suitable for applications requiring fast switching and minimal power loss. Additionally, it is utilized in automotive and industrial applications for load switching and energy management systems.

Equivalent

The DMN3065LW-7 is an N-channel MOSFET. Equivalent products include the SiHF15N65E, IRF540N, and FQP30N06L. Always check the specific parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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