DMN3018SSD-13

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DMN3018SSD-13

MOSFET 2N-CH 30V 6.7A 8SO

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Spécifications

Part Status Active
Base Product Number DMN3018
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 6.7A
Rds On (Max) @ Id, Vgs 22mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 697pF @ 15V
Power - Max 1.5W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

DMN3018SSD-13 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications requiring efficient switching and power management. It features a low on-resistance, which minimizes conduction losses, making it suitable for various applications, including power supplies, motor drives, and inverters.
The device operates with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) rating that allows for significant power handling capabilities. Its compact surface-mount package ensures ease of integration into circuit designs.
Key parameters often include gate threshold voltage, thermal resistance, and safe operating area, essential for ensuring reliability and performance in demanding environments. Overall, DMN3018SSD-13 is favored in electronic circuits that require fast switching speeds and efficient thermal management, contributing to improved system performance and energy efficiency.

Features

The DMN3018SSD-13 is a power MOSFET designed for efficient switching applications. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V.
3. Current Rating: Continuous drain current (I_D) up to 25A, providing robust performance in various applications.
4. On-Resistance: Low R_DS(on) typically around 10 mΩ, which minimizes power losses and enhances efficiency.
5. Gate Threshold Voltage: V_GS(th) range of 1V to 3V, allowing for compatibility with lower gate drive voltages.
6. Package: Available in a standard TO-220 package, facilitating easy heat dissipation.
7. Fast Switching: Suitable for high-speed applications, improving overall system efficiency.
8. Applications: Commonly used in power management, DC-DC converters, motor control, and other electronic devices.
These features make the DMN3018SSD-13 ideal for a variety of electronic and industrial applications, ensuring reliability and performance.

Package

The DMN3018SSD-13 is packaged in a Surface Mount Device (SMD) format, specifically using a PowerPAK SO-8 package type. This compact design is suited for applications requiring efficient thermal performance and space-saving solutions.

Pinout

The DMN3018SSD-13 is an N-channel MOSFET with a total of 5 pins. Its primary functions include switching and amplifying electronic signals in various applications.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): The output where current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
This MOSFET is designed for low-voltage applications and features a low on-resistance, making it efficient for power management in devices. It is often used in power switching applications, including DC-DC converters, motor drives, and other circuit designs requiring efficient power handling.
For specific applications and ratings, please refer to the manufacturer's datasheet for detailed specifications.

Manufacturer

The manufacturer of the DMN3018SSD-13 is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient innovations and technology. The company provides a wide range of products, including analog, discrete, and logic devices, as well as sensors and integrated circuits, catering to diverse industries such as automotive, industrial, consumer electronics, and communications. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor emphasizes sustainability and energy management in its product offerings, supporting the growing demand for efficient electronic solutions.

Application

The DMN3018SSD-13 is a silicon N-channel MOSFET primarily used in power management applications. Its application areas include switching power supplies, DC-DC converters, motor control, and load switching in various electronic devices. Its low on-resistance and fast switching capabilities make it ideal for efficient power handling in automotive, industrial, and consumer electronics.

Equivalent

The DMN3018SSD-13 is a N-channel MOSFET. Equivalent products include the IRLZ44N, STP16NF06, and FQP30N06L. Always verify specifications such as VDS, ID, RDS(on), and gate thresholds to ensure compatibility in your application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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