DMN26D0UT-7

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DMN26D0UT-7

MOSFET N-CH 20V 230MA SOT523

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Spécifications

Supplier Diodes Incorporated
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 230mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.2V, 4.5V
RdsOn(Max)@IdVgs 3Ohm @ 100mA, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
Vgs(Max) ±10V
InputCapacitance(Ciss)(Max)@Vds 14.1 pF @ 15 V
PowerDissipation(Max) 300mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-523

Vue d'ensemble

Description

DMN26D0UT-7 is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It is characterized by its low on-resistance, high-speed operation, and ability to handle high voltages and currents, making it suitable for power management and conversion in electronic circuits.
This MOSFET typically features a maximum drain-source voltage (V_DS) and a continuous drain current (I_D) rating that allows it to be used in various applications, including power supplies, motor drivers, and automotive systems. Its gate threshold voltage (V_GS) is optimized for compatibility with standard logic levels, enabling easy interfacing with microcontrollers and other digital devices.
The DMN26D0UT-7 is often encapsulated in a compact package, which aids in thermal management and minimizes space in circuit designs. Overall, it is a versatile component widely utilized in modern electronic systems for its reliability and performance.

Features

The DMN26D0UT-7 is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various applications.
2. Continuous Drain Current: The device supports high continuous drain current (I_D), typically up to 26A, allowing it to handle substantial power loads.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)), enhancing efficiency by reducing power loss during operation.
4. Fast Switching Speed: The MOSFET is optimized for rapid switching, making it ideal for high-frequency applications.
5. Thermal Performance: It features a robust thermal performance, ensuring reliable operation under elevated temperatures.
6. Package Type: The device is available in a compact surface-mount package, facilitating space-saving designs in circuit boards.
These features make the DMN26D0UT-7 suitable for applications in power supplies, DC-DC converters, and motor drivers.

Package

The DMN26D0UT-7 is packaged in a surface mount type, specifically a SOT-23 package. This compact form factor is designed for easy integration into electronic circuits.

Pinout

The DMN26D0UT-7 is an N-channel MOSFET with a total of 8 pins. The pinout and functions are as follows:
1. Gate (G): Control terminal for turning the MOSFET on or off.
2. Drain (D): The terminal through which current flows to the load when the MOSFET is turned on.
3. Source (S): The terminal through which current exits the MOSFET.
The typical configuration includes a gate, drain, and source as the primary functional pins. The device is commonly used in switching applications due to its low RDS(on), which results in reduced power loss and improved efficiency.
For specific applications, refer to the datasheet for detailed electrical characteristics and maximum ratings.

Manufacturer

The DMN26D0UT-7 is a product manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and analog semiconductors, providing essential components for various electronic applications. The company focuses on delivering high-performance products while ensuring efficiency and reliability. Nexperia's offerings are utilized across diverse industries, including automotive, industrial, and consumer electronics. The DMN26D0UT-7 is specifically a N-channel MOSFET, widely used in power management and switching applications.

Application

The DMN26D0UT-7 is a N-channel MOSFET used in various applications, including power management, motor control, and switching power supplies. It is suitable for automotive, industrial, and consumer electronics due to its low on-resistance and fast switching capabilities. Common uses include load switching, DC-DC converters, and driver circuits.

Equivalent

The DMN26D0UT-7 is a dual N-channel MOSFET. Equivalent products include the AO3400, BSS138, and 2N7000. Check specifications for voltage and current ratings to ensure compatibility. Always refer to the manufacturer's datasheets for detailed comparisons.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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