DMN26D0UFB4-7

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DMN26D0UFB4-7

MOSFET N-CH 20V 230MA 3DFN

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 230mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.5V, 4.5V
RdsOn(Max)@IdVgs 3Ohm @ 100mA, 4.5V
Vgs(th)(Max)@Id 1.1V @ 250µA
Vgs(Max) ±10V
InputCapacitance(Ciss)(Max)@Vds 14.1 pF @ 15 V
PowerDissipation(Max) 350mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage X2-DFN1006-3

Vue d'ensemble

Description

DMN26D0UFB4-7 is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification. This specific MOSFET is designed to handle high voltages and currents, making it suitable for power management applications.
Key specifications typically include a low on-resistance, fast switching times, and a high threshold voltage, which enhance its efficiency and performance in various applications such as power supplies, motor drives, and signal processing.
When using the DMN26D0UFB4-7, it's important to consider its electrical characteristics, including maximum drain-source voltage, continuous drain current, and gate threshold voltage. Proper thermal management and circuit design are also crucial to ensure reliable operation and prevent damage.
Overall, the DMN26D0UFB4-7 is an essential component for engineers and designers looking to implement effective switching solutions in their electronic projects.

Features

The DMN26D0UFB4-7 is a N-channel MOSFET from the DMN series, known for its high efficiency and performance in power management applications. Key features include:
1. Voltage Rating: Typically, it has a maximum drain-source voltage (Vds) of 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: It can handle continuous drain current (Id) up to around 32A, depending on the thermal conditions.
3. On-Resistance: Features low Rds(on), which minimizes power loss and enhances thermal performance.
4. Fast Switching: Designed for quick switching capabilities, ideal for high-frequency applications.
5. Package Type: Usually available in a TO-220 or similar package, facilitating easy integration into various designs.
6. Thermal Performance: Good thermal resistance allows for effective heat dissipation, enhancing reliability.
These features make the DMN26D0UFB4-7 suitable for applications such as power supplies, motor drives, and other power conversion systems.

Package

The DMN26D0UFB4-7 is a dual N-channel MOSFET package type, specifically available in the SOT-23 surface mount configuration.

Pinout

The DMN26D0UFB4-7 is a dual N-channel MOSFET packaged in a small outline (SO-8) format. It features a total of 8 pins. The functions of the pins are as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - Drain connection for the first MOSFET.
3. Source 1 (S1) - Source connection for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Drain 2 (D2) - Drain connection for the second MOSFET.
6. Source 2 (S2) - Source connection for the second MOSFET.
7. Common Source (CS) - Common source pin for both MOSFETs.
8. N/C (Not Connected) - This pin is not internally connected and should be left unconnected.
This device is typically used in power management applications due to its low RDS(on) and high-speed switching capabilities.

Manufacturer

The DMN26D0UFB4-7 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, focusing on high-quality and efficient electronic solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in producing high-performance semiconductor devices, leveraging advanced manufacturing techniques to ensure reliability and efficiency. Nexperia was established as a spin-off from NXP Semiconductors and operates with a commitment to innovation and sustainability in the semiconductor industry.

Application

The DMN26D0UFB4-7 is a dual N-channel MOSFET used in various applications including power management, switching regulators, and DC-DC converters. It is suitable for load switching in consumer electronics, automotive systems, and industrial equipment due to its low RDS(on) and fast switching capabilities. Additionally, it can be utilized in LED drivers and motor control circuits.

Equivalent

The DMN26D0UFB4-7 is a dual N-channel MOSFET. Equivalent products include the BSS84, SI2302, and FDBL070N15A. Always verify specific requirements like voltage, current ratings, and package type to ensure compatibility in your application.

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