DMG6602SVT-7

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DMG6602SVT-7

MOSFET N/P-CH 30V TSOT23-6

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Not For New Designs
FETType N and P-Channel
FETFeature Logic Level Gate, 4.5V Drive
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 3.4A, 2.8A
RdsOn(Max)@IdVgs 60mOhm @ 3.1A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 13nC @ 10V
InputCapacitance(Ciss)(Max)@Vds 400pF @ 15V
Power-Max 840mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Vue d'ensemble

Description

DMG6602SVT-7 is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance, making it efficient for switching applications, thus reducing power loss and improving overall system performance. This component is commonly used in DC-DC converters, motor drives, and other power supply circuits.
The MOSFET has a voltage rating of 60V and a continuous current rating that allows it to handle significant loads while maintaining thermal stability. Its fast switching capabilities enable higher efficiency in power conversion applications, while the rugged design ensures reliability in demanding environments.
Additionally, the DMG6602SVT-7 is packaged in a compact surface-mount format, facilitating ease of integration into modern electronic designs. Overall, it serves as a crucial component for engineers looking to optimize power efficiency and system performance in their applications.

Features

The DMG6602SVT-7 is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. High Voltage Rating: It can handle a maximum drain-source voltage (VDS) of 60V, making it suitable for various applications.
2. Low On-Resistance: With a maximum RDS(on) of around 0.025Ω, it minimizes power loss and improves efficiency.
3. High Current Capability: It supports continuous drain current (ID) up to 66A, suitable for demanding power applications.
4. Fast Switching Speeds: This MOSFET is designed for rapid turn-on and turn-off, enhancing performance in switching circuits.
5. Thermal Management: It features a robust thermal resistance design, allowing for efficient heat dissipation.
6. Package Type: The device typically comes in a TO-220 package, facilitating easy mounting and heat sink attachment.
These features make the DMG6602SVT-7 ideal for use in power management, DC-DC converters, and motor control applications.

Package

The DMG6602SVT-7 is packaged in a surface mount device (SMD) configuration, specifically in a SOT-23 package type. This compact package design allows for efficient space utilization on printed circuit boards.

Pinout

The DMG6602SVT-7 is an N-channel MOSFET that comes in a SO-8 package with a total of 8 pins. The pinout and their respective functions are as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): The terminal through which current flows out of the MOSFET.
3. Drain (D): The terminal through which current flows into the MOSFET.
4. Source (S): Common pin for multiple devices, typically the source pin.
5. Gate (G): Common pin for multiple devices, typically the gate pin.
6. Drain (D): Common pin for multiple devices, typically the drain pin.
7. Drain (D): Common pin for multiple devices, typically the drain pin.
8. Source (S): Common pin for multiple devices, typically the source pin.
This MOSFET is designed for low-voltage, high-speed switching applications, providing high efficiency and low on-resistance.

Manufacturer

The DMG6602SVT-7 is manufactured by Microchip Technology Inc. This company specializes in designing and manufacturing microcontrollers, analog semiconductors, and other integrated circuits. Founded in 1989, Microchip is known for its innovation in embedded control solutions, providing a range of products that serve various applications including automotive, industrial, consumer, and communication sectors. Their offerings are widely used in both consumer electronics and complex industrial systems, making them a key player in the semiconductor industry.

Application

The DMG6602SVT-7 is a dual N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, synchronous rectification, load switching, and power supply designs. It is suitable for use in automotive, industrial, and consumer electronics due to its low on-resistance and fast switching capabilities, enhancing efficiency in various power electronic systems.

Equivalent

The DMG6602SVT-7 is a dual N-channel MOSFET. Equivalent products include the BSS123, IRF3708, and SI7120DP. Always check the specific parameters such as voltage, current ratings, and package type to ensure compatibility. For precise replacements, refer to the manufacturer's datasheets or cross-reference tools.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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