CY7C109D-10VXI

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CY7C109D-10VXI

IC SRAM 1MBIT PARALLEL 32SOJ

  • Fabricant
  • Mfr. Partie #CY7C109D-10VXI
  • Paquet 32-BSOJ
  • Fiche de données
  • En stock6276

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Spécifications

Package Bulk,Tube
ProductStatus Active
MemoryType Volatile
MemoryFormat SRAM
Technology SRAM - Asynchronous
MemorySize 1Mb (128K x 8)
MemoryInterface Parallel
WriteCycleTime-WordPage 10ns
AccessTime 10 ns
Voltage-Supply 4.5V ~ 5.5V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package/Case 32-BSOJ (0.400, 10.16mm Width)

Vue d'ensemble

Description

The CY7C109D-10VXI is a 1M x 8 asynchronous static RAM (SRAM) produced by Cypress Semiconductor. It features a 10-nanosecond access time, making it suitable for high-speed applications. This SRAM is designed to operate with a single +5V power supply and is available in a 32-pin TSOP package, which helps in saving board space.
Key features include a low power consumption mode, easy interfacing with microcontrollers and digital signal processors, and a simple read/write operation. The device provides a byte-wide data bus, allowing efficient data handling for various applications, including networking, telecommunications, and automotive systems.
With its fast access time and reliable performance, the CY7C109D-10VXI is ideal for cache memory, data buffering, and temporary storage in electronic systems. Its robust architecture ensures durability and longevity in operation, making it a popular choice among embedded system designers.

Features

The CY7C109D-10VXI is a synchronous static RAM (SRAM) with the following key features:
1. Memory Capacity: 1 Megabit (128K x 8 bits).
2. Access Time: 10 ns, enabling fast data access.
3. Voltage Supply: Operates at +5V for enhanced compatibility.
4. Pin Configuration: 32-pin TSOP package, allowing for compact designs.
5. Synchronous Operation: Supports high-speed synchronous operation for efficient data transfer.
6. Burst Mode: Features burst read/write modes for increased throughput.
7. Data Retention: Offers low power consumption during operation and standby mode.
8. Cycle Times: Offers a range of cycle times suitable for various applications.
9. Asynchronous Read/Write: Supports both synchronous and asynchronous operations, providing flexibility in design.
10. Applications: Ideal for use in networking, telecom, and other high-speed applications.
This SRAM is suited for applications requiring high-speed data processing and reliability.

Package

The CY7C109D-10VXI is available in a 32-pin Thin Quad Flat Package (TQFP). This package type is designed for compact, surface-mount applications, providing reduced footprint and ease of integration into electronic systems.

Pinout

The CY7C109D-10VXI is a 1-Mbit (128K x 8) asynchronous SRAM chip with a pin count of 32. It features a fast access time of 10 ns, making it suitable for high-speed applications.
Key functions of the CY7C109D-10VXI include:
1. Data Input/Output: 8 data pins (D0-D7) for data read/write operations.
2. Address Input: 17 address pins (A0-A16) to select one of the 128K memory locations.
3. Chip Enable (CE): Activates the chip for read or write operations.
4. Write Enable (WE): Controls write operations; when low, data can be written to the memory.
5. Output Enable (OE): Controls the output buffers; when low, data is driven onto the output pins.
6. Power Supply: VCC and GND pins for power connections.
This device is ideal for applications requiring fast data access, such as networking, telecommunications, and embedded systems.

Manufacturer

The CY7C109D-10VXI is manufactured by Cypress Semiconductor Corporation, which is a subsidiary of Infineon Technologies AG. Cypress is a prominent company in the semiconductor industry, specializing in a range of products including memory, microcontrollers, and programmable system-on-chip solutions. Founded in 1982, Cypress has a strong focus on innovation in embedded systems, and its products are used in various applications such as automotive, industrial, and consumer electronics. The CY7C109D-10VXI specifically is a synchronous SRAM, known for its high-speed performance, making it suitable for applications requiring fast data access.

Application

The CY7C109D-10VXI is a high-speed, asynchronous SRAM used in various application areas including telecommunications, networking equipment, automotive systems, industrial automation, and consumer electronics. It provides fast data access and is ideal for cache memory, data buffering, and temporary storage in systems requiring quick read/write cycles. Its low power consumption makes it suitable for portable devices as well.

Equivalent

The CY7C109D-10VXI is a 1Mbit (128K x 8) asynchronous SRAM. Equivalent products include:
1. MT18LSD1M8 - Micron
2. AS7C256K16 - Alliance Memory
3. IS61LV1024 - Integrated Silicon Solution
4. W622N1024BL - Winbond
Ensure to verify specifications like voltage, speed, and package type for compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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