CSD88599Q5DC

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CSD88599Q5DC

MOSFET 2 N-CH 60V 22-VSON-CLIP

  • Fabricant
  • Mfr. Partie #CSD88599Q5DC
  • Paquet VSONCLIP-22
  • Fiche de données
  • En stock5869

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType 2 N-Channel (Half Bridge)
FETFeature Standard
DraintoSourceVoltage(Vdss) 60V
RdsOn(Max)@IdVgs 2.1mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 27nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 4840pF @ 30V
Power-Max 12W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 22-PowerTFDFN

Vue d'ensemble

Description

CSD88599Q5DC is a high-performance, integrated power management device from Texas Instruments. It is primarily designed for use in DC-DC converters, providing efficient power delivery for various applications, including industrial and consumer electronics. This device features a dual-channel, low on-resistance power MOSFET configuration, which helps minimize energy loss and improve thermal performance.
Key specifications include a wide input voltage range, high efficiency, and advanced thermal management features. The CSD88599Q5DC also integrates protection features such as overcurrent and thermal shutdown, enhancing the reliability of the system. Its compact form factor and high switching frequency make it suitable for space-constrained applications.
Engineered for robustness and efficiency, CSD88599Q5DC is ideal for engineers looking to optimize power management solutions in their designs.

Features

The CSD88599Q5DC is a high-performance power MOSFET designed for various applications, including power management in DC-DC converters, motor drives, and other power switching systems. Key features include:
1. Low On-Resistance (RDS(on)): It provides efficient power conversion with minimal conduction losses.
2. High Voltage Rating: Capable of handling high-voltage applications, ensuring reliability in demanding environments.
3. Fast Switching Speed: Enables rapid turn-on and turn-off, improving overall system efficiency.
4. Thermal Performance: Designed with a robust thermal package that supports efficient heat dissipation.
5. Compact Package: Available in a small footprint, facilitating space-saving designs in electronics.
6. Low Gate Charge (Qg): Reduces the drive power requirements, enhancing the efficiency of gate driver circuits.
Overall, the CSD88599Q5DC is suitable for high-efficiency and compact designs in various electronic applications.

Package

The CSD88599Q5DC is packaged in a QFN (Quad Flat No-lead) format. This package type features a compact design suitable for surface mounting, providing excellent thermal performance and minimizing inductance in high-frequency applications.

Pinout

The CSD88599Q5DC is a dual N-channel MOSFET from Texas Instruments, designed for high-efficiency power management applications. It features a 5mm x 6mm QFN package with 12 pins.
The pin functions are as follows:
1. G1, G2: Gate drive inputs for the upper and lower MOSFETs.
2. S1, S2: Source terminals for the upper and lower MOSFETs.
3. D1, D2: Drain terminals for the upper and lower MOSFETs.
4. NC: No connect pins that should not be connected to any circuit.
5. GND: Ground connection for the device.
This device is utilized in applications like synchronous buck converters, providing low on-resistance and fast switching capabilities to improve overall efficiency.

Manufacturer

The CSD88599Q5DC is manufactured by Texas Instruments (TI), a prominent semiconductor company based in the United States. Founded in 1930, Texas Instruments specializes in the design and manufacturing of a wide range of integrated circuits (ICs) and semiconductor devices. The company is known for its innovations in analog and embedded processing technologies, serving various markets, including automotive, industrial, consumer electronics, and telecommunications. TI's products are widely utilized in various applications, such as power management, signal processing, and microcontrollers, making it a key player in the global electronics industry.

Application

The CSD88599Q5DC is a high-performance power MOSFET primarily used in applications such as DC-DC converters, battery management systems, and power supply circuits. Its low on-resistance and high efficiency make it suitable for energy conversion in consumer electronics, automotive power systems, and renewable energy systems. Additionally, it is utilized in server and networking applications for efficient power distribution.

Equivalent

The CSD88599Q5DC is a high-performance power stage for DC-DC converters. Equivalent products include Texas Instruments' CSD88599Q5DC, Infineon's IRF6645PBF, and ON Semiconductor's NCP81074. Always check specifications for voltage, current ratings, and thermal characteristics to ensure compatibility.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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