CSD86360Q5D

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CSD86360Q5D

MOSFET 2N-CH 25V 50A 8LSON

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  • Mfr. Partie #CSD86360Q5D
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Spécifications

Series NexFET™
Part Status Active
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 50A
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2060pF @ 12.5
Power - Max 13W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerLDFN
Supplier Device Package 8-LSON (5x6)
Base Product Number CSD86360Q5

Vue d'ensemble

Description

CSD86360Q5D is a high-performance, power management integrated circuit (PMIC) designed for applications requiring efficient DC-DC conversion. This device typically features a synchronous buck converter architecture, which enables it to step down voltage levels with high efficiency, making it suitable for powering processors, FPGAs, and other digital loads.
Key characteristics of the CSD86360Q5D include a wide input voltage range, adjustable output voltage, and integrated protection features such as overcurrent and overtemperature protection. Its compact package size allows for space-constrained designs, and it often supports a range of switching frequencies for flexibility in design.
This PMIC is commonly used in consumer electronics, telecommunications, and industrial applications, where efficiency and reliability are critical. Overall, the CSD86360Q5D is an effective choice for designers looking to optimize power delivery in their systems.

Features

The CSD86360Q5D is a high-performance power MOSFET designed for various applications, including power management and DC-DC converters. Key features include:
1. Low On-Resistance (RDS(on)): It provides efficient operation with minimal power loss.
2. High Voltage Rating: Operates at up to 60V, suitable for a range of applications.
3. Low Gate Charge (Qg): Enhances switching performance and reduces switching losses.
4. Compact Package: Typically offered in a 5x6 mm DPAK or similar package, facilitating space-efficient designs.
5. Thermal Performance: Designed for effective heat dissipation, contributing to system reliability.
6. Fast Switching Speed: Supports higher frequency operation, beneficial for modern converters.
7. Robust Reliability: Built to withstand demanding environments with excellent ruggedness.
These features make the CSD86360Q5D ideal for use in power supplies, electric vehicles, and renewable energy systems.

Package

The CSD86360Q5D is packaged in a VQFN (Very Thin Quad Flat No-Lead) format, specifically a 5 mm x 6 mm size. This type of package allows for efficient thermal performance and compact design, suitable for high-density applications.

Pinout

The CSD86360Q5D is a high-performance Power MOSFET from Texas Instruments, featuring a total of 5 pins. The pin configuration and their functions are as follows:
1. VDS (Drain) - Pin for the drain connection of the MOSFET.
2. GND (Source) - Pin for the source connection, typically connected to ground.
3. VGS (Gate) - Pin for the gate control signal, which turns the MOSFET on or off.
4. GND (Source) - Another source pin; typically used for power distribution or thermal management.
5. VDS (Drain) - Another drain pin; used for improved current handling and thermal performance.
This device is typically used in power management applications, including synchronous buck converters and power supplies, due to its low on-resistance and high efficiency.

Manufacturer

The CSD86360Q5D is manufactured by Texas Instruments (TI), a prominent American technology company. Texas Instruments specializes in designing and manufacturing semiconductor products, including analog and digital integrated circuits. The company is known for its contributions to various sectors, including industrial, automotive, communications, and consumer electronics. TI is particularly recognized for its analog and embedded processing solutions, making it a key player in the semiconductor industry.

Application

The CSD86360Q5D is a power MOSFET optimized for high efficiency in DC-DC converters, such as those found in server power supplies, telecom equipment, and industrial applications. It is suitable for synchronous rectification, battery management systems, and other power management applications where high performance and thermal efficiency are critical.

Equivalent

The CSD86360Q5D chip is a MOSFET used in power management applications. Equivalent products include the Texas Instruments CSD87350Q5D and Infineon IRF7752. Always verify specifications like voltage, current ratings, and package type to ensure compatibility in your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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