CSD25485F5

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CSD25485F5

MOSFET P-CH 20V 3.2A 3PICOSTAR

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  • Mfr. Partie #CSD25485F5
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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series FemtoFET™
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 8V
RdsOn(Max)@IdVgs 35mOhm @ 900mA, 8V
Vgs(th)(Max)@Id 1.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 3.5 nC @ 4.5 V
Vgs(Max) -12V
InputCapacitance(Ciss)(Max)@Vds 533 pF @ 10 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 3-PICOSTAR

Vue d'ensemble

Description

CSD25485F5 likely refers to a specific course code or module, possibly within an academic or professional program. Without additional context, it is challenging to provide precise details. However, courses with similar codes typically cover specialized topics within fields such as computer science, data science, or another technical discipline.
An "Introduction to CSD25485F5" course would generally aim to familiarize students with foundational concepts, methodologies, and practical applications related to the subject matter. It may involve lectures, hands-on projects, and assessments to ensure a comprehensive understanding of the material.
For more accurate information, please check the specific institution's course catalog or syllabus associated with CSD25485F5.

Features

The CSD25485F5 is a high-performance power MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 25V.
2. Current Handling: Capable of handling continuous drain currents up to 90A, making it suitable for high-load applications.
3. Low R_DS(on): Offers low on-resistance, which minimizes conduction losses and improves overall efficiency.
4. Fast Switching: Designed for high-speed switching applications, reducing transition losses.
5. Thermal Performance: Good thermal characteristics allow for effective heat dissipation, enhancing reliability.
6. Package Type: Available in a compact package, facilitating easier integration into circuit designs.
These features make the CSD25485F5 ideal for use in power supplies, DC-DC converters, and other energy-efficient applications.

Package

The CSD25485F5 is a PowerSO-8 package type. This package is designed for efficient thermal performance and compactness, suitable for power management applications.

Pinout

The CSD25485F5 is a N-channel MOSFET from Texas Instruments designed for power applications. It features a 5-pin package. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching operation.
2. Source (S): Connects to the source terminal of the MOSFET, typically at a lower potential or ground.
3. Drain (D): Connects to the drain terminal, where the load is connected.
This device is known for its low on-resistance and high-speed switching capabilities, making it suitable for various applications such as power management and DC-DC converters. Always refer to the datasheet for detailed specifications and characteristics.

Manufacturer

The CSD25485F5 is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company known for designing and manufacturing a range of electronic components, including analog ICs, embedded processors, and digital signal processors. The company primarily serves various sectors, including automotive, industrial, communications, and consumer electronics. Founded in 1930 and headquartered in Dallas, Texas, TI is recognized for its innovation in analog and embedded processing technologies. The CSD25485F5 specifically is a power MOSFET, designed for efficient power management applications.

Application

CSD25485F5 is a high-performance power MOSFET primarily used in applications such as DC-DC converters, power management systems, and motor drives. Its low on-resistance and fast switching capabilities make it suitable for efficient power delivery in renewable energy systems, consumer electronics, and industrial automation. Additionally, it is utilized in electric vehicles for battery management and drivetrain performance.

Equivalent

The CSD25485F5 is a Power MOSFET from Texas Instruments, typically used in power management applications. Equivalent products can include the following options:
1. BSC100N06LS - N-channel MOSFET by Infineon.
2. IRF3205 - N-channel MOSFET by Infineon.
3. STP75NF75 - N-channel MOSFET by STMicroelectronics.
Always check the datasheets for specific electrical characteristics to ensure compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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