CSD25402Q3A

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CSD25402Q3A

MOSFET P-CH 20V 76A 8VSON

  • Fabricant
  • Mfr. Partie #CSD25402Q3A
  • Paquet PowerVDFN-8
  • Fiche de données
  • En stock6367

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 76A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 8.9mOhm @ 10A, 4.5V
Vgs(th)(Max)@Id 1.15V @ 250µA
GateCharge(Qg)(Max)@Vgs 9.7 nC @ 4.5 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 1790 pF @ 10 V
PowerDissipation(Max) 2.8W (Ta), 69W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (3x3.15)

Vue d'ensemble

Description

CSD25402Q3A typically refers to a specific course or module in a curriculum, likely focusing on a particular aspect of computer science or software development. The "CSD" prefix suggests it is related to Computer Science Development, while "25402" likely identifies the course number, and "Q3A" may indicate the term or level within a program.
The course may cover topics such as programming languages, software engineering principles, algorithms, or data structures. It may also include practical applications, project work, or theoretical foundations essential for understanding software development processes.
For precise details about the course content, prerequisites, or objectives, it’s best to consult the official syllabus or academic program description provided by the institution offering the course.

Features

The CSD25402Q3A is a high-performance, N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 25V.
2. Current Rating: Capable of handling continuous drain currents up to 60A, with pulsed currents higher.
3. RDS(on): Low on-resistance of about 2.5 mΩ at a gate-source voltage (VGS) of 10V, which enhances efficiency and reduces heat generation.
4. Gate Threshold Voltage: VGS(th) ranges from 1V to 3V, allowing for efficient drive with low gate voltage.
5. Fast Switching: Optimized for high-speed switching applications, making it suitable for DC-DC converters and other power applications.
6. Thermal Performance: Offers good thermal stability, with a maximum junction temperature of 175°C.
7. Package Type: Available in a compact SOIC-8 package, ensuring ease of integration into various circuit designs.
These features make the CSD25402Q3A ideal for applications requiring high efficiency and reliability.

Package

The CSD25402Q3A is packaged in a QFN (Quad Flat No-lead) format, specifically in a 3 mm x 3 mm package. This type of package is designed for improved thermal performance and reduced parasitic inductance, making it suitable for high-efficiency applications in power management and similar electronic circuits.

Pinout

The CSD25402Q3A is a dual N-channel MOSFET packaged in a 3x3 mm QFN (Quad Flat No-lead) package. It has a total of 8 pins. The pin functions are as follows:
1. D1 - Drain of the first N-channel MOSFET.
2. D2 - Drain of the second N-channel MOSFET.
3. G1 - Gate of the first N-channel MOSFET.
4. G2 - Gate of the second N-channel MOSFET.
5. S1 - Source of the first N-channel MOSFET.
6. S2 - Source of the second N-channel MOSFET.
7. GND - Ground connection.
8. NC - Not connected (typically left floating).
These pins facilitate the operation of the MOSFETs in various applications, including power management and DC-DC converters. The device is designed for high efficiency and low on-resistance.

Manufacturer

The CSD25402Q3A is manufactured by Texas Instruments (TI), a prominent semiconductor company headquartered in Dallas, Texas. Texas Instruments designs and produces a wide range of electronic components, including analog chips, embedded processors, and digital signal processors. The company is well-known for its innovations in semiconductor technology and has a diverse portfolio catering to various industries such as automotive, industrial, communications, and consumer electronics. TI is recognized for its commitment to research and development, contributing significantly to advancements in electronic systems and applications.

Application

CSD25402Q3A is a high-performance power MOSFET primarily used in applications such as DC-DC converters, power management systems, and synchronous rectification. Its low R_DS(on) and fast switching capabilities make it suitable for electric vehicles, industrial power supplies, and consumer electronics. Additionally, it's effective in battery charging and renewable energy systems, enhancing efficiency and thermal performance in various power applications.

Equivalent

The CSD25402Q3A is a dual N-channel MOSFET used in power management applications. Equivalent products include the IRF3205, BSC010N06LS, and AON7410. However, always check the specific datasheet for electrical characteristics and package compatibility to ensure they meet your design requirements.

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