CSD25213W10

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CSD25213W10

MOSFET P-CH 20V 1.6A 4DSBGA

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  • Mfr. Partie #CSD25213W10
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Spécifications

Series NexFET™
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 47mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 4.5 V
Vgs (Max) -6V
Input Capacitance (Ciss) (Max) @ Vds 478 pF @ 10 V
Power Dissipation (Max) 1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA
Base Product Number CSD25213

Vue d'ensemble

Description

CSD25213W10 is a course that typically focuses on the principles and practices of computer science and software development. It may cover topics such as programming languages, algorithms, data structures, software engineering methodologies, and system design. The course aims to equip students with problem-solving skills and technical knowledge essential for careers in software development and information technology. Hands-on projects, collaborative learning, and theoretical concepts are likely integral components, helping students to apply their knowledge in real-world scenarios. Additional elements may include assessments, practical coding exercises, and exposure to current technologies in the field. This foundational course prepares students for more advanced topics in computer science and software engineering.

Features

The CSD25213W10 is a high-performance power MOSFET designed for efficient power management in various applications. Key features include:
1. N-Channel Design: Offers low on-resistance, enhancing power efficiency and thermal performance.
2. Voltage Rating: Typically rated for high voltage, making it suitable for a wide range of applications.
3. Low Gate Charge: Facilitates faster switching speeds, improving overall circuit performance.
4. Package Type: Usually comes in a compact surface mount package, allowing for space-saving designs.
5. Maximum Current: Capable of handling significant current loads, ideal for power supply and conversion applications.
6. Thermal Performance: Designed to manage heat effectively, ensuring reliable operation under demanding conditions.
These features make the CSD25213W10 suitable for applications like power supplies, motor drives, and other power conversion circuits.

Package

The CSD25213W10 is packaged in a WSON (Very thin, Quad Flat No-lead) format, specifically a 10-pin WSON package. This type of packaging provides a compact footprint and efficient thermal performance, suitable for applications in power management and high-density circuits.

Pinout

The CSD25213W10 is a power MOSFET from Texas Instruments. It features a total of 10 pins. The primary function of this device is to act as a high-efficiency power switch in various applications, including DC-DC converters, battery management systems, and power management circuits.
The pin configuration includes:
1. Source (S): Connects to ground or the negative side of the load.
2. Gate (G): Controls the on/off state of the MOSFET.
3. Drain (D): Connects to the positive side of the load.
This device is designed for high-speed switching and low on-resistance, making it suitable for energy-efficient applications. For detailed pin mapping, refer to the manufacturer's datasheet.

Manufacturer

The CSD25213W10 is manufactured by Texas Instruments (TI), a prominent semiconductor company headquartered in Dallas, Texas. Texas Instruments is known for designing and manufacturing a wide range of electronic components, including analog and digital semiconductors, embedded processors, and various integrated circuits. The company serves diverse industries such as automotive, industrial, communication, and consumer electronics. TI is particularly recognized for its innovation in power management solutions, analog technology, and microcontrollers, playing a crucial role in enabling advancements in electronic devices and systems worldwide.

Application

CSD25213W10 is a power stage IC primarily used in applications such as DC-DC converters, power management systems, and voltage regulation modules. It is suitable for high-performance computing, telecommunications, consumer electronics, and automotive systems, where efficient power delivery and compact design are critical. Its integration of MOSFETs and drivers enhances performance in various power supply designs.

Equivalent

The CSD25213W10 chip is a Power MOSFET used in various applications. Equivalent products include the Texas Instruments CSD25210W10 and the Vishay Si8453DP. Other alternatives may include the Infineon BSC090N15NS and the ON Semiconductor NTMFS5C825N. It's important to compare specifications such as voltage, current, and RDS(on) to ensure compatibility in your specific application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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