CSD19538Q3A

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CSD19538Q3A

MOSFET N-CH 100V 15A 8VSON

  • Fabricant
  • Mfr. Partie #CSD19538Q3A
  • Paquet PowerVDFN-8
  • Fiche de données
  • En stock4413

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 15A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 59mOhm @ 5A, 10V
Vgs(th)(Max)@Id 3.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 4.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 454 pF @ 50 V
PowerDissipation(Max) 2.8W (Ta), 23W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSONP (3x3.3)

Vue d'ensemble

Description

CSD19538Q3A refers to a specific product or specification, though without additional context, it’s challenging to provide detailed information. Generally, designations like CSD19538Q3A often relate to semiconductor devices, such as MOSFETs or other electronic components. These components are used in various applications, including power management, signal processing, and circuit design.
Typically, such identifiers include details about the product’s characteristics, including voltage ratings, current handling, package type, and technology used. For precise information, one would typically refer to the manufacturer's datasheet or technical documentation, which outlines the component's specifications, performance parameters, and application guidelines.
If you have a specific context or application in mind, please provide more details for a more tailored response.

Features

The CSD19538Q3A is a high-performance power MOSFET designed for applications requiring efficient power management. Key features include:
1. Type: N-channel MOSFET.
2. Voltage Rating: 30V, suitable for low-voltage applications.
3. Current Rating: Capable of handling high continuous drain currents, making it ideal for demanding applications.
4. R_DS(on): Low on-resistance (typically around 5.8 mΩ), which enhances efficiency by reducing power losses during operation.
5. Fast Switching Speed: Optimized for fast switching, improving performance in DC-DC converters and other high-frequency applications.
6. Thermal Performance: Designed with a low thermal resistance, allowing for better heat dissipation and reliability.
7. Package: Available in a compact QFN (Quad Flat No-lead) package, facilitating easier integration into designs with limited space.
These features make the CSD19538Q3A suitable for applications such as power supplies, battery management systems, and motor drivers.

Package

The CSD19538Q3A is packaged in a Q3A (SIP-3) format, which is a compact surface-mount package designed for efficient thermal performance and reduced inductance. This package type enhances power handling and efficiency in applications such as DC-DC converters and power management systems.

Pinout

The CSD19538Q3A is a MOSFET from Texas Instruments featuring a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET; applying a voltage here turns the device on or off.
2. Source (S) - The terminal through which current leaves the MOSFET when it is in the "on" state.
3. Drain (D) - The terminal through which current enters the MOSFET when it is conducting.
4. Tab/Drain (D) - This is also the drain connection, typically connected to a heat sink for thermal management.
5. Body Diode (internal) - Not a pin, but it's important to note that this device has an intrinsic body diode that provides reverse current capability.
The CSD19538Q3A is designed for high-efficiency applications in power management, providing low on-resistance and fast switching.

Manufacturer

The CSD19538Q3A is manufactured by Texas Instruments (TI), a global semiconductor company. Texas Instruments is known for designing and manufacturing a wide range of electronic components, including analog and digital semiconductors, embedded processors, and integrated circuits. The company serves various markets, such as automotive, industrial, communications, and consumer electronics. TI is recognized for its innovative products and solutions that enable advancements in technology across multiple applications.

Application

The CSD19538Q3A is a high-performance N-channel MOSFET primarily used in power management applications, including DC-DC converters, synchronous rectification, and battery management systems. Its low RDS(on) and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, enhancing efficiency in power supplies and energy conversion systems.

Equivalent

The CSD19538Q3A is a MOSFET primarily used in power applications. Equivalent products include the CSD19536Q3A, CSD19537Q3A, and other similar N-channel MOSFETs from manufacturers like Infineon, Vishay, and ON Semiconductor. Always check the datasheets for specific electrical characteristics like RDS(on), VDS, and current ratings to ensure compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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