CSD19536KTT

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CSD19536KTT

MOSFET N-CH 100V 200A DDPAK

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 200A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V
RdsOn(Max)@IdVgs 2.4mOhm @ 100A, 10V
Vgs(th)(Max)@Id 3.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 153 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 12000 pF @ 50 V
PowerDissipation(Max) 375W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DDPAK/TO-263-3

Vue d'ensemble

Description

CSD19536KTT refers to a specific course or program, likely related to a field such as computer science, software development, or a similar area. The course code typically indicates its level and content focus within an academic curriculum.
An introduction to CSD19536KTT would generally cover foundational concepts relevant to the subject, including key theories, methodologies, and practical applications. Students might engage in hands-on projects, collaborative learning, and theoretical discussions to build a comprehensive understanding of the material.
The course could also explore industry trends, tools, and technologies pertinent to the subject matter, preparing students for further study or careers in the field. Assessment methods may include examinations, assignments, and group projects to evaluate understanding and skills development.
For specific details, including prerequisites, content outline, and learning outcomes, it is recommended to consult the official course syllabus or academic institution offering the program.

Features

The CSD19536KTT is a high-performance N-channel MOSFET designed for applications requiring efficient power management. Key features include:
1. Low On-Resistance (Rds(on)): It offers low on-resistance, minimizing conduction losses and improving overall efficiency.
2. High Voltage Rating: Supports a voltage rating of up to 40V, making it suitable for various power applications.
3. Fast Switching: Optimized for high-speed switching, which enhances performance in power converters and motor drivers.
4. Thermal Performance: Excellent thermal characteristics allow for effective heat dissipation, ensuring reliability under load.
5. Compact Package: Housed in a compact DPAK package, it facilitates space-saving designs.
The CSD19536KTT is ideal for use in DC-DC converters, battery management systems, and other power applications where efficiency and thermal management are critical.

Package

The CSD19536KTT is packaged in a VQFN (Very Thin Quad Flat No-lead) package type. It is designed for efficient thermal performance and compact size, suitable for various applications in power management and switching.

Pinout

The CSD19536KTT is a N-channel MOSFET from Texas Instruments. It features a total of 5 pins. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate terminal allows the device to turn ON or OFF.
2. Drain (D): This pin connects to the load. Current flows from the drain when the MOSFET is in the ON state.
3. Source (S): This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the load.
The CSD19536KTT is designed for high-performance applications, including power management and DC-DC converters, with a maximum drain-source voltage of 30V and a continuous drain current rating of 35A. Its low on-resistance enhances efficiency in power applications.

Manufacturer

The CSD19536KTT is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and manufactures a wide variety of electronic components, including integrated circuits, microcontrollers, and analog chips. Founded in 1930, TI is known for its innovations in digital signal processing and analog technologies. The company serves various markets, including automotive, industrial, personal electronics, and communications, providing solutions that enhance functionality, performance, and efficiency in electronic devices. Texas Instruments is recognized for its commitment to research and development, making it a key player in the semiconductor industry.

Application

The CSD19536KTT is a high-performance power MOSFET primarily used in applications like DC-DC converters, power management systems, and motor drives. Its low R_DS(on) and fast switching capabilities make it suitable for use in renewable energy systems, electric vehicles, and consumer electronics. Additionally, it is utilized in power supplies, battery management systems, and industrial automation for efficient energy conversion and control.

Equivalent

The CSD19536KTT is a N-channel MOSFET typically used in power management applications. Equivalent products include the IRF3205, FSDM056N06, and BSC025N06LS. Always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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