CSD19532Q5BT

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CSD19532Q5BT

MOSFET N-CH 100V 100A 8VSON

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  • Mfr. Partie #CSD19532Q5BT
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Spécifications

Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4810 pF @ 50 V
Power Dissipation (Max) 3.1W (Ta), 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON-CLIP (5x6)
Package / Case 8-PowerTDFN
Base Product Number CSD19532

Vue d'ensemble

Description

CSD19532Q5BT is a high-performance, integrated power stage device designed for DC-DC conversion applications, particularly suitable for synchronous buck converters. It combines a high-side and low-side MOSFET in a single package, optimizing efficiency and thermal performance. The device features a wide input voltage range, high switching frequency, and low RDS(on), which reduces conduction losses.
It's designed for applications that demand high efficiency and power density, such as in computing, automotive, and industrial systems. The CSD19532Q5BT supports various control schemes, including voltage mode and current mode, allowing for versatile implementation in different designs. With its compact footprint and robust thermal characteristics, it is well-suited for modern power management solutions.
Overall, the CSD19532Q5BT provides engineers with an effective solution for improving the efficiency and performance of power supply designs.

Features

The CSD19532Q5BT is a high-performance N-channel MOSFET designed for power management applications. Its key features include:
1. Voltage Rating: It typically supports high voltage up to 30V.
2. RDS(on): Offers low on-resistance (around 5.5 mΩ), which enhances efficiency and reduces power loss during operation.
3. Current Handling: Capable of handling significant continuous current, making it suitable for various power applications.
4. Fast Switching Speed: Enables efficient operation in high-frequency applications, reducing switching losses.
5. Thermal Performance: Designed with robust thermal characteristics, allowing for effective heat dissipation.
6. Packaging: Available in a compact QFN package, facilitating space-saving designs in electronic circuits.
7. Applications: Ideal for DC-DC converters, motor drives, and battery management systems.
These features make the CSD19532Q5BT suitable for demanding applications requiring efficiency, reliability, and compact design.

Package

The CSD19532Q5BT is packaged in a QFN (Quad Flat No-lead) format, specifically a 5x6 mm size. This package type provides efficient thermal performance and is designed for surface-mount applications, making it suitable for various power management and switching applications.

Pinout

The CSD19532Q5BT is a N-channel MOSFET from Texas Instruments, specifically designed for power management applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's ON/OFF states.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
4. Body/Source (B/S) - Often internally connected to the source, providing a path for current flow.
5. Thermal Pad (TP) - Used for heat dissipation; not a pin in the traditional sense but offers a thermal management option.
The device is notable for its low R_DS(on) and high-speed operation, making it suitable for applications in DC-DC converters, power management, and other high-efficiency designs.

Manufacturer

The manufacturer of the CSD19532Q5BT is Texas Instruments (TI). Texas Instruments is a multinational technology company based in the United States, primarily known for designing and manufacturing semiconductors and various electronics components. Founded in 1930, TI operates in the fields of analog electronics, embedded processors, and digital signal processing, among others. The company serves a wide range of industries, including automotive, industrial, communications, and consumer electronics, and is recognized for its innovation and contribution to the semiconductor market.

Application

The CSD19532Q5BT is a power MOSFET designed for high-efficiency applications. Its primary application areas include DC-DC converters, power management systems, and battery chargers. It is commonly used in power supplies for servers, telecommunications, and industrial equipment due to its low on-resistance and fast switching capabilities, which enhance performance in high-frequency operations.

Equivalent

The CSD19532Q5BT is a high-performance N-channel MOSFET typically used in power applications. Equivalent products include the Infineon BSC012N08NS3, ON Semiconductor NTMFS5C628NL, and the Vishay SiR404DP. When selecting an equivalent, consider parameters such as RDS(on), VDS, ID, and package type to ensure compatibility with your specific application. Always verify the datasheets for detailed specifications.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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