CSD18543Q3AT

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CSD18543Q3AT

MOSFET N-CH 60V 12A/60A 8VSON

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Spécifications

Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 15.6mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 30 V
Power Dissipation (Max) 66W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSONP (3x3.3)
Package / Case 8-PowerVDFN
Base Product Number CSD18543

Vue d'ensemble

Description

CSD18543Q3AT is a specific code that likely refers to a product, component, or standard in a particular field, such as electronics, materials, or data systems. Without additional context, it's challenging to provide precise details. However, such codes typically denote specifications, versions, or classifications used by manufacturers or regulatory bodies to identify and differentiate products or standards within their catalogs.
If you need information on a specific area related to CSD18543Q3AT, such as its applications, features, or industry relevance, please provide more context.

Features

The CSD18543Q3AT is a high-performance, N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (R_DS(on)): Minimizes conduction losses, enhancing overall efficiency, particularly in power supply and motor control applications.
2. High Voltage Rating: Supports applications requiring robust performance under high-voltage conditions.
3. Fast Switching Speed: Enables efficient operation in high-frequency applications, reducing switching losses.
4. Thermal Performance: Offers a low thermal resistance, allowing for better heat dissipation and improved reliability.
5. Compact Package: Available in a compact, surface-mount package for space-constrained designs.
These features make the CSD18543Q3AT suitable for use in various applications, including power converters, battery management systems, and industrial equipment.

Package

The CSD18543Q3AT is housed in a QFN (Quad Flat No-lead) package. This package type is known for its compact size and thermal efficiency, making it suitable for high-performance applications in power management and switching regulators.

Pinout

The CSD18543Q3AT is a dual N-channel MOSFET in a 3mm x 3mm QFN package. It features a total of 6 pins, which serve the following functions:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load for current flow.
3. Source (S) - Connects to the ground or the return path for current.
This device is designed for applications such as synchronous buck converters, power management, and load switch applications, offering low RDS(on) for efficient performance. The compact package and low thermal resistance make it suitable for high-density designs.

Manufacturer

The CSD18543Q3AT is manufactured by Texas Instruments (TI), an American technology company. Texas Instruments specializes in semiconductor design and manufacturing, particularly in analog and embedded processing technologies. The company is well-known for its wide range of products, including integrated circuits (ICs), microcontrollers, and digital signal processors, which are used in various applications such as automotive, industrial, communications, and consumer electronics. TI is recognized for its innovation in electronic solutions and has a strong presence in the global semiconductor market.

Application

The CSD18543Q3AT is a power MOSFET primarily used in applications such as DC-DC converters, power management systems, and battery management in consumer electronics, electric vehicles, and industrial equipment. Its low RDS(on) and fast switching capabilities make it suitable for high-efficiency power supplies and motor drives, enhancing performance in compact and energy-efficient designs.

Equivalent

The CSD18543Q3AT is a dual N-channel MOSFET. Equivalent products include the Infineon BSC010N04LS and the Vishay SI7120DP. Ensure to check specifications like V_DS, I_D, R_DS(on), and package type for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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