CSD18510Q5B

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CSD18510Q5B

MOSFET N-CH 40V 300A 8VSON

  • Fabricant
  • Mfr. Partie #CSD18510Q5B
  • Paquet PowerTDFN-8
  • Fiche de données
  • En stock2429

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 300A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 0.96mOhm @ 32A, 10V
Vgs(th)(Max)@Id 2.3V @ 250µA
GateCharge(Qg)(Max)@Vgs 153 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 11400 pF @ 20 V
PowerDissipation(Max) 156W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (5x6)

Vue d'ensemble

Description

CSD18510Q5B is a high-performance power management integrated circuit (PMIC) designed by Texas Instruments. It is part of the CSD family of devices and is typically used in applications requiring efficient power conversion and regulation. This device features advanced control technology, enabling high efficiency and low standby power consumption.
Key specifications include a wide input voltage range, adjustable output voltage, and integrated protection features such as overcurrent and thermal shutdown. The CSD18510Q5B is suitable for various applications, including consumer electronics, telecommunications, and industrial systems, where reliable power supply is crucial.
Its compact design allows for easier integration into space-constrained environments, making it a popular choice for engineers seeking efficient and reliable power solutions.

Features

The CSD18510Q5B is a high-performance Power MOSFET designed for a variety of applications, particularly in power management and conversion. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for medium-voltage applications.
2. On-Resistance: Offers low on-resistance (R_DS(on)) typically around 5.5 mΩ, which reduces power loss and improves efficiency.
3. Current Rating: Capable of handling continuous drain current up to 106A, facilitating high-power applications.
4. Fast Switching: Designed for fast switching speeds, enhancing performance in switching power supplies and DC-DC converters.
5. Thermal Performance: It features a thermally efficient package to manage heat dissipation effectively.
6. Package Type: Available in a compact 5mm x 6mm QFN package, which aids in minimizing PCB space.
Overall, the CSD18510Q5B is optimized for efficiency and thermal management in high-frequency applications.

Package

The CSD18510Q5B is packaged in a QFN (Quad Flat No-lead) format, specifically the 5x6 mm footprint. This type of package is designed for efficient thermal performance and space-saving in applications such as power management and DC-DC converters.

Pinout

The CSD18510Q5B is a N-channel MOSFET from Texas Instruments, featuring a total of 5 pins. The pin configuration and their respective functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This pin connects to the load and is where the current flows out when the device is on.
3. Source (S): This pin is connected to the ground or the return path for the current.
Typically, the CSD18510Q5B is used in applications such as power management, DC-DC converters, and other switching applications due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The CSD18510Q5B is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company headquartered in Dallas, Texas, that designs and manufactures a wide range of analog and embedded processing products. The company is well-known for its innovations in integrated circuits (ICs), microcontrollers, and digital signal processors, serving various markets including automotive, industrial, communications, and consumer electronics. TI is recognized for its commitment to research and development, offering extensive technical support and resources for engineers and designers.

Application

The CSD18510Q5B is a N-channel MOSFET primarily used in power management applications, such as DC-DC converters, synchronous rectification, and power supplies. It is suitable for automotive, industrial, and consumer electronics due to its high efficiency, low on-resistance, and fast switching capabilities. Additional applications include battery management systems and motor control circuits.

Equivalent

The CSD18510Q5B is a N-channel MOSFET from Texas Instruments. Equivalent products include the Fairchild FDS6910, Infineon BSC090N06LS, and Vishay SiR465DP. When considering equivalents, ensure compatibility in voltage, current ratings, R_DS(on), and package type for your specific application. Always consult datasheets for detailed specifications.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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