CSD17308Q3

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CSD17308Q3

MOSFET N-CH 30V 14A/44A 8VSON

  • Fabricant
  • Mfr. Partie #CSD17308Q3
  • Paquet PowerTDFN-8
  • Fiche de données
  • En stock4223

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 14A (Ta), 44A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 3V, 8V
RdsOn(Max)@IdVgs 10.3mOhm @ 10A, 8V
Vgs(th)(Max)@Id 1.8V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.1 nC @ 4.5 V
Vgs(Max) +10V, -8V
InputCapacitance(Ciss)(Max)@Vds 700 pF @ 15 V
PowerDissipation(Max) 2.7W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-VSON-CLIP (3.3x3.3)

Vue d'ensemble

Description

CSD17308Q3 is likely a course code for a specific class or module, potentially related to computer science or software development. It may cover topics such as programming languages, software engineering principles, algorithms, or data structures. The course is designed to provide students with foundational knowledge and practical skills relevant to the field.
Typically, such a course would include lectures, hands-on projects, and assessments to evaluate understanding and application of concepts. Students would engage with current technologies, tools, and methodologies essential for effective software development.
To get a complete overview of the course objectives, syllabus, and prerequisites, it's best to consult the official course description provided by the educational institution offering it.

Features

The CSD17308Q3 is a dual N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Low R_DS(on): Offers a low on-resistance, enhancing efficiency and reducing power loss during operation.
2. High Current Rating: Capable of handling significant continuous drain current, making it suitable for demanding applications.
3. Low Gate Charge: Ensures fast switching speeds, which is beneficial for high-frequency applications and improves overall performance.
4. Thermal Performance: Designed with good thermal characteristics for effective heat dissipation, contributing to reliability and longevity.
5. Compact Package: Available in a compact SOIC-8 package, allowing for space-saving designs in various electronic circuits.
6. Wide Operating Voltage: Suitable for various voltage levels, increasing its versatility in different applications such as DC-DC converters and motor drivers.
Overall, the CSD17308Q3 is ideal for power management applications requiring high efficiency and reliability.

Package

The CSD17308Q3 is packaged in a 3mm x 3mm QFN (Quad Flat No-lead) package. This type of package is designed for efficient thermal performance and space-saving in PCB layouts.

Pinout

The CSD17308Q3 is a N-channel MOSFET with a total of 8 pins. Its primary functions include switching and amplification in various electronic applications. The pin configuration is as follows:
1. Gate (G): This terminal controls the MOSFET's switching state.
2. Drain (D): The output terminal where the current flows to the load.
3. Source (S): The terminal connected to ground or the power supply, completing the circuit.
The CSD17308Q3 is designed for high-efficiency and low-loss applications, often used in power management systems, DC-DC converters, and other electronic circuits that require fast switching capabilities. It features low on-resistance and fast switching speeds, making it suitable for various power applications.

Manufacturer

The CSD17308Q3 is manufactured by Texas Instruments (TI), a prominent American technology company. Founded in 1930, Texas Instruments is primarily known for designing and manufacturing semiconductors and various integrated circuits, which are used in electronics and various applications, including telecommunications, automotive, and consumer electronics. TI specializes in analog and embedded processing solutions, and its products are widely utilized across industries for their reliability and performance. The CSD17308Q3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications, showcasing TI's expertise in developing efficient and effective electronic components.

Application

CSD17308Q3 is a high-performance power MOSFET commonly used in applications such as DC-DC converters, synchronous rectification, power management systems, and motor drives. Its low RDS(on) and fast switching capabilities make it suitable for efficient power conversion in consumer electronics, industrial equipment, and renewable energy systems.

Equivalent

The CSD17308Q3 is a N-channel MOSFET. Equivalent products include the IRF3205, AO3400, STP75NF75, and BSC020N06LS. When selecting an equivalent, ensure to compare specifications like voltage rating, current rating, RDS(on), and package type to confirm compatibility for your specific application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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