CSD16327Q3

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CSD16327Q3

MOSFET N-CH 25V 60A 8VSON

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  • Mfr. Partie #CSD16327Q3
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Spécifications

Series NexFET™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Rds On (Max) @ Id, Vgs 4mOhm @ 24A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 4.5 V
Vgs (Max) +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 12.5 V
Power Dissipation (Max) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN
Base Product Number CSD16327

Vue d'ensemble

Description

CSD16327Q3 appears to be a specialized course or module code, but without specific context, it's difficult to provide precise details. Generally, such codes are used in academic settings to refer to particular classes or subjects. An "Introduction to CSD16327Q3" would likely cover the foundational elements of whatever subject the code pertains to, providing students with essential concepts, methodologies, and frameworks relevant to the course's focus area. This introduction might include overviews of key topics, literature, or technologies associated with the subject, as well as setting learning objectives and expectations for the course. For a more detailed and accurate description, additional context about the institution offering the course and the specific field of study would be needed. If it's a code used in a specific curriculum or program, consulting the syllabus or course catalog from that institution would provide the most accurate information.

Features

The CSD16327Q3 is a power MOSFET transistor often used in electronic devices for efficient power management. It features a low on-resistance, which minimizes power loss and enhances efficiency when switching electrical loads. This MOSFET is designed for high-speed applications due to its fast switching capabilities. It operates with a low gate charge, making it suitable for designs that require efficient power usage. Additionally, it can handle relatively high currents and voltages, making it versatile for various applications, including DC-DC converters and power management in portable electronics. The compact Q3 package ensures ease of integration into space-constrained designs.

Package

The CSD16327Q3 is a MOSFET transistor that comes in a QFN (Quad Flat No-leads) package, specifically a 3 mm x 3 mm SON (Small Outline No-lead) package. This type of packaging is designed for efficient thermal performance and minimal footprint, suitable for applications requiring high power density.

Pinout

The CSD16327Q3 is a power MOSFET from Texas Instruments. It comes in a SON 3x3 mm package and features 8 pins. The primary function of the CSD16327Q3 is to serve as a switch in power management applications, providing efficient power conversion and management with low on-resistance. This MOSFET is typically used in applications like DC-DC converters, motor drives, and load switches. The device is designed for high-efficiency power management, accommodating a wide range of input voltages and providing low power loss, making it suitable for portable electronics and various industrial applications.

Manufacturer

The CSD16327Q3 is manufactured by Texas Instruments. Texas Instruments is a global technology company that designs and manufactures semiconductors and integrated circuits. It is known for its wide range of products, including analog electronics, embedded processors, and digital signal processors, among others. The company serves various industries, including automotive, industrial, electronics, and communications. Texas Instruments is recognized for its innovation and technological advancements in the semiconductor industry.

Application

The CSD16327Q3 is a N-channel MOSFET commonly used in power management applications. Its application areas include DC-DC converters, switching regulators, motor drives, and power supplies. It is also utilized in battery protection circuits and load switches. The MOSFET's low on-resistance and high efficiency make it suitable for applications requiring efficient power handling and fast switching capabilities.

Equivalent

The CSD16327Q3 is a NexFET Power MOSFET from Texas Instruments. Equivalent products can include similar N-channel MOSFETs with comparable voltage, current ratings, and package types. Some potential equivalents are:
1. NXP's PSMN1R2-25YLD.
2. Vishay's SiR800DP.
3. Infineon's BSZ097N06LS.
Always check the datasheets to ensure electrical and thermal characteristics match your application's requirements.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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