CL32A227MQVNNNE

Les images sont à titre de référence seulement

CL32A227MQVNNNE

CAP CER 220UF 6.3V X5R 1210

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Series CL
Part Status Active
Capacitance 220 µF
Tolerance ±20%
Voltage - Rated 6.3V
Temperature Coefficient X5R
Operating Temperature -55°C ~ 85°C
Applications General Purpose
Mounting Type Surface Mount, MLCC
Package 1210 (3225 Metric)
Size / Dimension 0.126" L x 0.098" W (3.20mm x 2.50mm)
Thickness (Max) 0.110" (2.80mm)
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The CL32A227MQVNNNE is a specific type of electronic component, namely a capacitor, manufactured by Samsung Electro-Mechanics. It features a capacitance value of 2.2 microfarads (µF) and operates at a voltage rating of 25 volts (V). This component is part of the ceramic capacitor family and is known for its reliability and stability in various applications, including consumer electronics, automotive systems, and industrial equipment.
The "CL" designation indicates it is a multilayer ceramic capacitor (MLCC), which offers excellent performance characteristics such as low equivalent series resistance (ESR) and high-frequency response. The "32" signifies the capacitor's size code, while "A227" refers to its capacitance value, and "MQ" describes its temperature coefficient and tolerance. The suffix "VNNNE" provides additional information regarding packaging and lead configurations.
Overall, the CL32A227MQVNNNE is suitable for use in applications where compact size, high capacitance, and reliable performance are essential.

Features

The CL32A227MQVNNNE is a Samsung DDR4 SDRAM memory module with the following key features:
1. Capacity: 16 GB (Gigabytes)
2. Type: DDR4 SDRAM
3. Speed: 2400 MT/s (megatransfers per second)
4. Form Factor: SO-DIMM, designed for laptops and compact systems
5. Voltage: Operates at 1.2V, providing energy efficiency
6. Timing: CL22 latency, indicating the number of clock cycles it takes to access data
7. Configuration: Unbuffered memory, which is suitable for most consumer applications
8. Compatibility: Works with a wide range of Intel and AMD processors.
9. ECC: Non-ECC, meaning it does not support error correction features.
This module is designed to enhance system performance, improve multitasking capabilities, and ensure reliable operation in laptops and small form factor devices.

Package

The CL32A227MQVNNNE is a 4GB DDR4 SDRAM memory module packaged in a 262-pin SO-DIMM format. It is designed for laptops and compact systems, offering a standard 1.2V operating voltage and supporting various speeds for enhanced performance.

Pinout

The CL32A227MQVNNNE is a 2GB (256Mx16) DDR4 SDRAM memory module with a pin count of 260 pins. This component is specifically designed for mobile applications, such as smartphones and tablets. It operates at a voltage of 1.2V and supports data rates up to 2400 MT/s. The module is organized in a dual in-line memory module (DIMM) format.
In summary, the key specifications are:
- Pin Count: 260 pins
- Type: DDR4 SDRAM
- Capacity: 2GB (256Mx16)
- Voltage: 1.2V
- Data Rate: Up to 2400 MT/s
This memory module is typically used to enhance performance in portable devices, providing efficient data storage and retrieval capabilities.

Manufacturer

The CL32A227MQVNNNE is a product manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung Electronics is a major player in the global electronics industry, specializing in the design and manufacturing of a wide range of products including semiconductors, consumer electronics, and telecommunications equipment. The CL32A227MQVNNNE specifically is a type of capacitor, which is commonly used in various electronic devices for energy storage and regulation. Samsung Electronics is known for its innovation and technological advancements, consistently ranking among the largest electronics manufacturers in the world.

Application

The CL32A227MQVNNNE is a surface-mount ceramic capacitor with a capacitance of 22 µF and a voltage rating of 6.3V. Its application areas include decoupling, filtering, and energy storage in electronic devices, such as smartphones, tablets, and computers. It is also used in automotive electronics, industrial equipment, and consumer electronics, providing stable performance over a range of temperatures and frequencies.

Equivalent

The CL32A227MQVNNNE is a 2GB DDR4 SDRAM memory module. Equivalent products include:
1. HMA82GU6CJR8N-VK
2. M471A1K43DB1-CTD
3. KVR24S17S6/8
4. CT2K4G4DFS8213
Ensure compatibility based on specifications like speed, voltage, and form factor when selecting alternatives.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire