CGHV59070F

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CGHV59070F

RF MOSFET HEMT 50V 440224

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  • Mfr. Partie #CGHV59070F
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Spécifications

Series GaN
Part Status Active
Technology HEMT
Frequency 4.4GHz ~ 5.9GHz
Gain 13.3dB
Voltage - Test 50 V
Current - Test 150 mA
Power - Output 76W
Voltage - Rated 150 V
Package / Case 440224
Supplier Device Package 440224
Base Product Number CGHV59070

Vue d'ensemble

Description

CGHV59070F is a high-performance gallium nitride (GaN) high electron mobility transistor (HEMT) designed for RF and microwave applications. It features a compact package and offers excellent efficiency, thermal performance, and linearity. This device is suitable for a range of applications, including telecommunications, satellite communications, and radar systems.
The CGHV59070F operates across a wide frequency range, typically up to several GHz, making it ideal for power amplification tasks. Its design enhances power density and reduces the overall size of RF circuits, making it beneficial for modern compact electronic systems.
Key specifications often include high output power, low noise figure, and robust reliability under various operating conditions. As GaN technology continues to advance, devices like the CGHV59070F are pivotal in pushing the boundaries of RF performance while maintaining efficiency and thermal management.

Features

The CGHV59070F is a high-power GaN (gallium nitride) RF power transistor designed for applications in the RF and microwave frequency range. Key features include:
1. High Power Output: It can deliver up to 70 watts of output power, making it suitable for industrial and commercial RF applications.

2. Wide Frequency Range: Operates effectively from 1.0 to 1.5 GHz, ideal for various communication systems.
3. High Efficiency: Offers superior efficiency, which helps reduce thermal management needs and overall system costs.
4. Robust Performance: Designed to withstand harsh conditions and provides reliable performance in demanding environments.
5. Ease of Use: Comes in a compact package that simplifies integration into existing systems.
6. Low Thermal Resistance: Facilitates better heat dissipation, enhancing reliability and longevity.
These features make the CGHV59070F suitable for applications like cellular base stations, radar systems, and other high-power RF amplification tasks.

Package

The CGHV59070F is typically packaged in a 7x7 mm, 32-lead LGA (Land Grid Array) format, which allows for efficient thermal management and electrical performance in RF applications. This package type is designed for high-frequency and high-power operations, suitable for RF amplifiers and similar devices.

Pinout

The CGHV59070F is a high-gain, high-efficiency GaN (gallium nitride) RF power amplifier specifically designed for use in applications such as RF transmitters and communication systems. It features a pin count of 4, which includes the following functions:
1. Input (Pin 1): This pin is used for connecting the RF input signal.
2. Drain (Pin 2): This pin is connected to the power supply and is used for the drain connection of the transistor.
3. Source (Pin 3): This is the source pin, typically connected to ground in the application circuit.
4. Output (Pin 4): This pin provides the RF output signal.
The device operates in the frequency range of approximately 1.0 to 2.7 GHz and is designed to deliver high performance with low distortion, making it suitable for various RF applications.

Manufacturer

The CGHV59070F is manufactured by Cree, Inc., which is a leading company in the field of semiconductor technology, particularly known for its innovations in wide bandgap materials like silicon carbide (SiC) and gallium nitride (GaN). Cree specializes in the design and production of high-performance power and radio frequency (RF) devices, including transistors and diodes used in various applications such as wireless communication, power conversion, and industrial systems. The company focuses on providing advanced solutions that enhance efficiency and performance in electronic devices.

Application

The CGHV59070F is a high-power GaN HEMT (High Electron Mobility Transistor) typically used in applications such as RF and microwave power amplifiers, satellite communication, radar systems, and industrial RF heating. Its high efficiency and wide bandwidth make it suitable for advanced communication systems, including 5G networks and broadcast transmitters.

Equivalent

The CGHV59070F is a GaN HEMT amplifier typically used in RF applications. Equivalent products include the Qorvo TGA2211-SM, NXP BLF188XR, and Wolfspeed CGH40010F. Always verify specifications such as frequency range, power output, and gain for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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