C3M0065100K

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C3M0065100K

SICFET N-CH 1000V 35A TO247-4L

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Spécifications

Package Tube
Series C3M™
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1000 V
Current-ContinuousDrain(Id)@25°C 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 78mOhm @ 20A, 15V
Vgs(th)(Max)@Id 3.5V @ 5mA
GateCharge(Qg)(Max)@Vgs 35 nC @ 15 V
Vgs(Max) +19V, -8V
InputCapacitance(Ciss)(Max)@Vds 660 pF @ 600 V
PowerDissipation(Max) 113.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4L

Vue d'ensemble

Description

C3M0065100K is a specific model or part number that typically refers to a component or product in electronics, technology, or manufacturing. Without more context, it is challenging to provide a precise introduction. Generally, products with such designations could include items like sensors, microcontrollers, or specialized devices used in various applications, including automotive, industrial, or consumer electronics.
If you are looking for specific information on specifications, applications, or features of C3M0065100K, please provide additional context or clarification.

Features

The C3M0065100K is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 10A, which is ideal for various power management tasks.
3. RDS(on): The device features low on-resistance (RDS(on)), minimizing conduction losses and improving efficiency.
4. Switching Speed: Fast switching capabilities reduce switching losses, making it ideal for high-frequency applications.
5. Package Type: Usually available in a TO-220 or similar package, facilitating easy heat dissipation and mounting in circuits.
6. Thermal Performance: Good thermal conductivity allows for reliable operation at elevated temperatures.
These features make the C3M0065100K suitable for applications such as power supplies, converters, and motor drives.

Package

The C3M0065100K is a silicon carbide (SiC) MOSFET packaged in a TO-247 format. This package type is designed for high-power applications, providing efficient thermal management and electrical performance.

Pinout

The C3M0065100K is a silicon carbide (SiC) MOSFET manufactured by Cree (now Wolfspeed). It features a pin count of 5.
The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the load is connected and where the output current flows.
3. Source (S): The terminal connected to the ground or the negative side of the power supply.
Additionally, it often has a Thermal Pad for heat dissipation. This device is designed for high-efficiency power applications, supporting fast switching and high-temperature operation.

Manufacturer

The C3M0065100K is manufactured by Wolfspeed, a leading company in the semiconductor industry. Wolfspeed specializes in wide-bandgap semiconductor technologies, primarily focusing on silicon carbide (SiC) and gallium nitride (GaN) materials. Their products are used in various applications, including power electronics, radio frequency devices, and electric vehicles. Wolfspeed is known for its innovation in high-performance components that enable more efficient energy conversion and management, catering to markets such as automotive, industrial, and telecommunications. The company is a subsidiary of Cree, Inc., which is also involved in LED lighting and other semiconductor technologies.

Application

C3M0065100K is a silicon carbide (SiC) MOSFET used in various applications, including electric vehicles, renewable energy systems, power supplies, and industrial motor drives. Its high efficiency, thermal conductivity, and ability to operate at high temperatures make it ideal for high-power and high-frequency applications. Additionally, it is suitable for energy conversion systems and electric traction drives.

Equivalent

The C3M0065100K is a SiC MOSFET from Cree/Wolfspeed. Equivalent products include:
1. C3M0065100K (Wolfspeed)
2. SCT3060KL (ROHM)
3. STPSC20065 (STMicroelectronics)
4. MCC100SMA60 (MCC)
These alternatives may vary in specifications; always check datasheets for exact parameters.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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