C3M0060065K

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C3M0060065K

SICFET N-CH 650V 37A TO247-4L

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Spécifications

Series C3M™
Part Status Active
Base Product Number C3M0060065
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 79mOhm @ 13.2A, 15V
Vgs(th) (Max) @ Id 3.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 15 V
Vgs (Max) +15V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 600 V
Power Dissipation (Max) 150W (Tc)
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package TO-247-4
Packaging Tube

Vue d'ensemble

Description

C3M0060065K is likely a designation for a specific product, component, or model number, but without additional context, it's difficult to provide a precise introduction. In many cases, such codes are used in industries such as electronics, manufacturing, or logistics to identify items for inventory, specifications, or categorization purposes. If you can provide more context—such as the industry or the type of product associated with C3M0060065K—I can offer a more detailed and relevant introduction.

Features

The C3M0060065K is a compact, high-performance MOSFET designed for various applications. Key features include:
1. Voltage Rating: Typically operates at a voltage of 60V, suitable for medium voltage applications.
2. Current Rating: Supports continuous drain currents, often around 30A, enabling efficient power handling.
3. Low RDS(on): Offers a low on-resistance, enhancing efficiency and reducing heat generation during operation.
4. Fast Switching Speed: Capable of fast switching, making it ideal for high-frequency applications.
5. Thermal Performance: Designed with robust thermal characteristics, allowing for effective heat dissipation.
6. Package Type: Typically available in industry-standard packages like TO-220 or DPAK, facilitating easy integration into circuit designs.
7. Applications: Commonly used in power supplies, motor drives, and other power management systems.
These features make the C3M0060065K suitable for a wide range of electronic applications requiring reliability and efficiency. Always refer to the specific datasheet for detailed specifications and performance parameters.

Package

The C3M0060065K is a SiC MOSFET packaged in a TO-247 form factor. This package type is designed for high-power applications, providing efficient thermal performance and robust electrical characteristics.

Pinout

The C3M0060065K is a silicon carbide (SiC) MOSFET with a pin count of 4. Its primary functions include switching and power amplification in high-voltage applications. The pin configuration typically includes:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which the output current flows.
3. Source (S) - The terminal through which the current enters the device.
4. Case/Tab (T) - Often connected to the source and serves as a heat sink.
This device operates at high voltages (600V) and is suitable for applications such as power converters, inverters, and motor drives, providing advantages like high efficiency and fast switching speeds.

Manufacturer

The C3M0060065K is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that specializes in a wide range of products, including power semiconductors, microcontrollers, sensors, and automotive electronics. The company focuses on developing innovative solutions for various sectors, such as automotive, industrial, and Internet of Things (IoT) applications. Infineon is recognized for its expertise in energy efficiency and enabling smart technologies, making it a key player in the semiconductor industry.

Application

C3M0060065K is a silicon carbide (SiC) MOSFET used primarily in high-performance applications such as electric vehicles, renewable energy systems, industrial motor drives, and power supplies. Its features include high efficiency, fast switching speeds, and thermal stability, making it suitable for applications requiring high power density and reliability in harsh environments.

Equivalent

The C3M0060065K is a SiC MOSFET from Cree/Wolfspeed. Equivalent products include:
1. Infineon IMZA25R060M1
2. ON Semiconductor NTSDC006065K
3. STMicroelectronics STP12S060
4. ROHM SCT3060KL
Always confirm specifications like voltage, current ratings, and RDS(on) for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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