C2M1000170J

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C2M1000170J

SICFET N-CH 1700V 5.3A D2PAK

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Spécifications

Series C2M™
Part Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 1000 V
Power Dissipation (Max) 78W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (7-Lead)
Package / Case TO-263-7 (Straight Leads)
Base Product Number C2M1000170

Vue d'ensemble

Description

C2M1000170J refers to a specific code or identifier that may relate to a product, model, or a category in a certain industry, such as electronics, manufacturing, or logistics. Without additional context, it’s challenging to provide exact details about its significance or application. If it pertains to a product, it could include specifications or features relevant to that item. In many cases, such codes are used for inventory management, tracking, or classification purposes. For more accurate information, please provide the specific context or industry related to C2M1000170J.

Features

The C2M1000170J is a high-performance silicon carbide (SiC) MOSFET designed for various applications, particularly in power electronics. Key features include:
1. Voltage Rating: Rated for 1700V, enabling use in high-voltage applications.
2. Low On-Resistance: Offers low R_DS(on), which improves efficiency and reduces power losses during operation.
3. Fast Switching Speed: Facilitates higher frequency operation, contributing to smaller and lighter designs in power conversion systems.
4. High Thermal Conductivity: SiC technology allows for better thermal performance, enhancing reliability and lifespan.
5. Robustness: Designed to withstand harsh environments and high temperatures, making it suitable for demanding applications.
6. Enhanced Gate Drive: Compatible with standard gate drive circuits, simplifying integration into existing systems.
These features make the C2M1000170J ideal for applications like industrial power supplies, solar inverters, and electric vehicle systems.

Package

The C2M1000170J is typically packaged in a TO-220 format, which is a common package type for high-power devices. This package provides efficient heat dissipation and is suitable for various applications in power electronics.

Pinout

The C2M1000170J is a silicon carbide (SiC) MOSFET manufactured by Cree (now part of Wolfspeed). It features a pin count of 4. The primary functions of this device include high-efficiency switching in power applications, such as power converters, inverters, and motor drives, due to its high breakdown voltage and low on-resistance characteristics.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The main current-carrying terminal for the device.
3. Source (S) - The terminal that returns the current back to the circuit.
4. Body (B) (often internally connected to Source) - May be used for parasitic diode functionality.
This MOSFET is designed for high-voltage applications, allowing for improved thermal performance and efficiency compared to traditional silicon devices.

Manufacturer

The C2M1000170J is manufactured by Cree, Inc., which is a leading company in the semiconductor and LED technology sector. Cree specializes in wide-bandgap semiconductor solutions, particularly using silicon carbide (SiC) and gallium nitride (GaN) materials, to produce high-performance power devices and RF (radio frequency) solutions. The C2M1000170J is a SiC MOSFET, designed for applications in power electronics, such as electric vehicles, industrial power supplies, and renewable energy systems. Cree is known for its innovation in energy-efficient lighting and power technologies, making significant contributions to the advancement of solid-state lighting and power management.

Application

C2M1000170J is a high-performance semiconductor device primarily used in applications such as power management, renewable energy systems (like solar inverters), motor drives, and industrial automation. It is designed for efficient power conversion, enhancing energy efficiency in various electronic systems. Additionally, it can be utilized in electric vehicles and consumer electronics where high efficiency and thermal management are critical.

Equivalent

The C2M1000170J chip, a 1700V SiC MOSFET, has several equivalent products including the Wolfspeed C3M0075170J, ON Semiconductor MPSH005170, and the STMicroelectronics STP1700D. These alternatives offer similar voltage ratings and performance characteristics suitable for high-voltage applications. Always check specific data sheets for exact specifications and suitability for your design requirements.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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