C2M0280120D

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C2M0280120D

SICFET N-CH 1200V 10A TO247-3

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Spécifications

Series Z-FET™
Part Status Obsolete
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 370mOhm @ 6A, 20V
Vgs(th) (Max) @ Id 2.8V @ 1.25mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 20.4 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 259 pF @ 1000 V
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number C2M0280120

Vue d'ensemble

Description

C2M0280120D is likely a model number or code associated with a specific product or component, possibly in the electronics or manufacturing sectors. Without additional context, it's challenging to provide a detailed introduction. However, model numbers typically signify a unique identification for items like circuit boards, sensors, or machinery parts, facilitating inventory management and product specifications.
To understand it better, you may want to check the manufacturer's documentation, technical specifications, or product catalog associated with the model number. This would provide insights into its features, applications, and compatibility with other systems or components. If you have specific details or a particular industry context in mind, that could help narrow down the information further.

Features

The C2M0280120D is a high-performance MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 1200V, making it suitable for high-voltage applications.
2. Current Rating: The device supports a continuous drain current (Id) of up to 28A, allowing it to handle substantial loads.
3. Low On-Resistance: It boasts a low Rds(on) (typically 0.028 ohms), which minimizes conduction losses and enhances efficiency.
4. Fast Switching: The MOSFET is designed for fast switching speeds, ideal for applications that require quick transitions.
5. Thermal Performance: It has a robust thermal management capability, with a maximum junction temperature (Tj) of 150°C.
6. Package: Available in a TO-247 package, it facilitates easy mounting and thermal dissipation.
These features make the C2M0280120D suitable for applications such as power supplies, motor drives, and renewable energy systems.

Package

The C2M0280120D is packaged in a TO-247 type. This package is designed for efficient thermal management and is commonly used in power devices, providing robust performance in high-power applications.

Pinout

The C2M0280120D is a high-voltage MOSFET from the C2M series, specifically designed for high-frequency applications. It features a total of 8 pins.
The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET operation (turning it on/off).
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal, usually connected to ground in switching applications.
4. Body Diode - Utilized for reverse current flow when the MOSFET is off (integrated within the package but not a pin).
The specific pin arrangement can be found in the datasheet, which provides detailed information on electrical characteristics and maximum ratings, ensuring proper application in circuits such as power converters and inverters. Always refer to the manufacturer's documentation for precise pin functions and configurations.

Manufacturer

The C2M0280120D is manufactured by Cree, Inc., a leading company in the semiconductor and LED industry. Cree specializes in silicon carbide (SiC) and gallium nitride (GaN) materials for high-performance electronic devices, particularly in power and radio frequency applications. The C2M0280120D is a SiC MOSFET designed for high efficiency and thermal performance, making it suitable for applications in power conversion, electric vehicles, and renewable energy systems. Cree is known for its innovation and advancements in wide bandgap semiconductor technology, contributing significantly to the development of energy-efficient solutions across various industries.

Application

C2M0280120D is a high-performance integrated circuit used primarily in automotive applications, including power management, motor control, and battery management systems. It is suitable for industrial automation, robotics, and consumer electronics where efficient power conversion and control are essential. Additionally, it finds use in renewable energy systems and electric vehicle infrastructure due to its reliability and performance under demanding conditions.

Equivalent

The C2M0280120D is a MOSFET typically used in power applications. Equivalent products include the C2M0280120D itself from Cree, as well as similar devices like the C2M0280120D from other manufacturers, such as Infineon (e.g., IPP200N20N3), and STMicroelectronics (e.g., STP200N20). Always check the specific electrical characteristics and package types when looking for equivalents.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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