BYG23T-M3/TR

Les images sont à titre de référence seulement

BYG23T-M3/TR

DIODE AVALANCHE 1300V 1A DO214AC

  • Fabricant
  • Mfr. Partie #BYG23T-M3/TR
  • Paquet
  • Fiche de données
  • En stock9218

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Active
Technology Avalanche
Voltage - DC Reverse (Vr) (Max) 1300 V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Max) @ If 1.9 V @ 1 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 5 µA @ 1300 V
Capacitance @ Vr, F 9pF @ 4V, 1MHz
Mounting Type Surface Mount
Package / Case DO-214AC, SMA
Supplier Device Package DO-214AC (SMA)
Operating Temperature - Junction -55°C ~ 150°C
Base Product Number BYG23
Reverse Recovery Time (trr) 75 ns

Vue d'ensemble

Description

BYG23T-M3/TR is a specific type of transistor, typically used in electronic circuits. It is characterized by its high efficiency and reliability, making it suitable for various applications such as switching and amplification. The "BYG" prefix often indicates a specific series or family of transistors from a manufacturer, while "23T" may refer to its model number or specifications. The "M3/TR" suffix can signify packaging type and quantity, indicating that it is available in a tape-and-reel format for automated assembly.
Transistors like the BYG23T-M3/TR are essential components in modern electronics, facilitating signal processing and power management in devices ranging from consumer electronics to industrial machinery. Understanding its electrical characteristics, such as voltage ratings, current capacity, and switching speed, is crucial for engineers and designers when integrating it into circuits.

Features

The BYG23T-M3/TR is a high-performance N-channel MOSFET designed for various applications in power management. Key features include:
1. Voltage Rating: Typically rated for high-voltage applications, allowing it to handle substantial electrical loads.
2. Low On-Resistance (RDS(on)): This characteristic minimizes power loss during operation, enhancing efficiency.
3. Fast Switching Speed: Suitable for high-frequency applications, reducing transition losses.
4. Thermal Stability: Designed to operate effectively across a wide temperature range, ensuring reliability in different environments.
5. Package Type: Usually available in a compact surface-mount package for efficient PCB design and assembly.
This MOSFET is ideal for applications such as power supplies, motor drivers, and automotive systems, providing efficient and reliable performance in demanding conditions.

Package

The BYG23T-M3/TR is a surface mount (SMD) package type, specifically a TO-263 (DPAK) package. It is designed for efficient thermal performance and is commonly used in power management applications.

Pinout

The BYG23T-M3/TR is a Schottky barrier rectifier diode with a pin count of 2. Its primary functions include providing rectification in power supply circuits and protecting against reverse voltage. This diode is designed for high-speed switching applications and can handle a peak repetitive reverse voltage (V_RRM) of 30V and forward current (I_F) of up to 2A. Its low forward voltage drop makes it suitable for energy-efficient designs. The package type is typically DO-214AC (SMB), which aids in heat dissipation and space-saving on circuit boards.

Manufacturer

The BYG23T-M3/TR is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, sensor, logic, timing, and discrete devices. The company serves various markets, including automotive, industrial, communications, computing, and consumer electronics. With a focus on energy efficiency and sustainability, ON Semiconductor is known for its innovative technologies and commitment to providing high-performance solutions that meet the needs of its customers.

Application

The BYG23T-M3/TR is a general-purpose N-channel MOSFET used in various applications, including power management, switching power supplies, motor control, and automotive systems. It is suitable for low-voltage, high-speed switching applications, making it ideal for use in power converters, LED drivers, and battery management systems. Its efficient performance and thermal characteristics also make it applicable in consumer electronics and industrial equipment.

Equivalent

The BYG23T-M3/TR is a Schottky diode. Equivalent products include the BAT54, B130, and 1N5817 diodes. Check specific electrical characteristics like voltage and current ratings to ensure compatibility. Always confirm with the manufacturer's datasheet for exact specifications.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire