BVSS138LT1G

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BVSS138LT1G

MOSFET N-CH 50V 200MA SOT23-3

  • Fabricant
  • Mfr. Partie #BVSS138LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock6909

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 50 V
Current-ContinuousDrain(Id)@25°C 200mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 3.5Ohm @ 200mA, 5V
Vgs(th)(Max)@Id 1.5V @ 1mA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 50 pF @ 25 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The BVSS138LT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features a low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for power management and signal switching tasks. The device can operate at high voltages, with a maximum drain-source voltage (V_DS) of 30V, and it supports continuous drain current (I_D) ratings that enable efficient handling of power loads.
The BVSS138LT1G is typically used in applications such as power supplies, battery management systems, and motor controls. Its compact SOT-23 package allows for easy integration into circuit designs, making it ideal for space-constrained environments. This MOSFET is characterized by its low gate threshold voltage, facilitating effective control with minimal drive voltage. Overall, the BVSS138LT1G is a versatile component that enhances efficiency and performance in various electronic circuits.

Features

The BVSS138LT1G is a N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage switching applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 9.5A, which is beneficial for power management tasks.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.1 ohm at V_GS = 10V, ensuring efficient power conduction and minimized heat generation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, enabling operation with low gate drive voltages.
5. Package Type: Available in a compact SOT-23 package, it facilitates space-saving designs on PCBs.
6. Fast Switching Speeds: Ideal for high-frequency applications due to its quick switching capabilities.
Overall, the BVSS138LT1G is a versatile and efficient choice for power switching and amplification applications in consumer electronics and industrial equipment.

Package

The BVSS138LT1G is packaged in a Surface Mount Device (SMD) format, specifically the SC-74A package. This compact package type is designed for efficient performance in surface-mount applications.

Pinout

The BVSS138LT1G is a N-channel MOSFET specifically designed for low-voltage applications. It features a total of 3 pins:
1. Gate (G) - This pin is used to control the switching of the MOSFET. A voltage applied to the gate turns the device on or off.
2. Drain (D) - This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It is the reference point for the voltage applied to the gate.
The BVSS138LT1G is characterized by its low on-resistance, making it suitable for power management applications, including switching regulators and load switches. Its compact SOT-23 package enhances its versatility in various electronic circuits.

Manufacturer

The BVSS138LT1G is manufactured by ON Semiconductor, a company that specializes in the production of semiconductors and integrated circuits. ON Semiconductor is known for its wide range of products, including power management, analog, and mixed-signal devices, as well as sensors and connectivity solutions. The company serves various markets such as automotive, industrial, consumer electronics, and telecommunications. ON Semiconductor is focused on providing innovative solutions to meet the demands of modern electronics, emphasizing energy efficiency and sustainability.

Application

The BVSS138LT1G is a high-voltage, low-leakage N-channel MOSFET commonly used in applications such as power management, DC-DC converters, and battery-powered devices. It is suitable for low-side switching in automotive, industrial, and consumer electronics. Its features include fast switching speeds and high efficiency, making it ideal for applications requiring minimal power loss and heat generation.

Equivalent

The BVSS138LT1G is a dual N-channel MOSFET. Equivalent products include:
1. BSS138
2. SiB138D
3. 2N7000 (though it's a single N-channel).

Always verify the specifications (voltage, current, package) to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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