BVSS123LT1G

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BVSS123LT1G

MOSFET N-CH 100V 170MA SOT23-3

  • Fabricant
  • Mfr. Partie #BVSS123LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock3319

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 170mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 6Ohm @ 100mA, 10V
Vgs(th)(Max)@Id 2.8V @ 1mA
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 20 pF @ 25 V
PowerDissipation(Max) 225mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Vue d'ensemble

Description

The BVSS123LT1G is a low dropout (LDO) voltage regulator designed to provide a stable output voltage with minimal input-output voltage differential. It typically features an output voltage of 1.2V, making it suitable for powering low-voltage devices in various applications like consumer electronics, communications, and automotive systems.
Key characteristics include low quiescent current, which enhances efficiency, especially in battery-powered applications. The device is housed in a compact surface-mount package, facilitating easy integration into space-constrained designs.
The BVSS123LT1G includes built-in overcurrent protection and thermal shutdown features, ensuring reliability and safety during operation. It is compatible with a range of input voltages and can maintain a stable output even under varying load conditions.
Overall, the BVSS123LT1G is an effective solution for designers seeking a compact, reliable, and efficient LDO voltage regulator for low-voltage applications.

Features

The BVSS123LT1G is a low-voltage N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 20A, allowing it to manage significant loads.
3. R_DS(on): The on-resistance is low (typically around 12 mΩ at V_GS = 10V), which minimizes power loss and enhances efficiency during operation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is low (1V to 2V), allowing for effective switching with lower gate drive voltage.
5. Fast Switching: Designed for high-speed switching applications, it enhances performance in DC-DC converters and motor drives.
6. Package: It comes in a small footprint, TO-220 package, facilitating easy integration in compact designs.
Overall, the BVSS123LT1G is ideal for applications requiring efficient power management in a compact form factor.

Package

The BVSS123LT1G is packaged in a small SOT-23 (SOT-23-3) package type. This compact, surface-mount format is designed for space-efficient applications in electronic circuits.

Pinout

The BVSS123LT1G is a high-speed dual NPN transistor in a SOT-23 package. It features a total of 5 pins. The pin configuration is as follows:
1. Collector 1 (C1): Connects to the collector of the first NPN transistor.
2. Base 1 (B1): Connects to the base of the first NPN transistor for control signal input.
3. Emitter 1 (E1): Connects to the emitter of the first NPN transistor, typically grounded.
4. Collector 2 (C2): Connects to the collector of the second NPN transistor.
5. Base 2 (B2): Connects to the base of the second NPN transistor for control signal input.
The BVSS123LT1G is commonly used in switching and amplification applications, providing high-speed performance in compact forms.

Manufacturer

The BVSS123LT1G is manufactured by ON Semiconductor, a company that specializes in semiconductor solutions. ON Semiconductor is known for its wide range of products, including analog, power management, and digital logic devices, serving various industries such as automotive, industrial, communications, and consumer electronics. The company focuses on providing energy-efficient innovations and is recognized for its commitment to sustainability and high-quality manufacturing processes.

Application

The BVSS123LT1G is a Schottky barrier rectifier used primarily in power management applications. Key areas include power supplies, DC-DC converters, and automotive systems. It is ideal for high-frequency switching applications due to its low forward voltage drop and fast switching speed, making it suitable for use in chargers, LED drivers, and renewable energy systems. Additionally, it can be used in reverse battery protection circuits.

Equivalent

The BVSS123LT1G is a dual NPN and PNP bipolar junction transistor (BJT) in a SOT-23 package. Equivalent products include the MMBT2222A (NPN) and MMBT2907A (PNP), as well as the BC547 and BC557 series for general-purpose applications. Always verify specifications for exact compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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