BUT30V

Les images sont à titre de référence seulement

BUT30V

TRANS NPN 125V 100A ISOTOP

  • Fabricant
  • Mfr. Partie #BUT30V
  • Paquet ISOTOP
  • Fiche de données
  • En stock3688

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tube
ProductStatus Obsolete
TransistorType NPN
Current-Collector(Ic)(Max) 100 A
Voltage-CollectorEmitterBreakdown(Max) 125 V
VceSaturation(Max)@IbIc 900mV @ 10A, 100A
DCCurrentGain(hFE)(Min)@IcVce 27 @ 100A, 5V
Power-Max 250 W
OperatingTemperature 150°C (TJ)
MountingType Chassis Mount
Package/Case ISOTOP

Vue d'ensemble

Description

BUT30V is a type of silicon-controlled rectifier (SCR), commonly used in power electronics for controlling and switching applications. It belongs to the family of thyristors and is designed for high-voltage and high-current tasks. The device typically features a three-terminal structure: anode, cathode, and gate, which allows it to be turned on and off by applying a small gate current.
BUT30V can handle voltages up to 600 volts and can conduct currents up to 30 amperes, making it suitable for applications such as motor control, lighting systems, and power regulation. Its ability to switch on rapidly and withstand high power makes it valuable in various industrial and consumer electronics applications.
When integrating BUT30V into circuits, attention must be given to its thermal management and snubber circuits to handle inductive loads and prevent voltage spikes. Overall, BUT30V is a robust component in the field of power electronics, offering efficiency and reliability in systems requiring controlled power delivery.

Features

The BUT30V is a high-voltage N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: The maximum continuous drain current (I_D) is typically around 3A, which allows it to handle moderate power loads.
3. R_DS(on): It exhibits a low on-state resistance, generally around 0.3 to 0.5 ohms, facilitating efficient operation with minimized power loss.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically 1-2V, enabling easy drive with lower voltage signals.
5. Package: It is commonly available in TO-220 or TO-247 packages, providing good thermal performance for heat dissipation.
6. Applications: Ideal for switching applications, motor control, power management, and DC-DC converters.
These features make the BUT30V a versatile choice for engineers looking for reliable performance in various electronic circuits.

Package

The BUT30V is typically packaged in a TO-220 or TO-247 casing. These packages are designed for power transistors, providing efficient heat dissipation and easy mounting for various electronic applications.

Pinout

The BUT30V is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). It typically comes in a TO-220 package, which has three pins. The pin configuration is as follows:
1. Gate (G): This pin controls the MOSFET; applying a voltage here allows current to flow from the drain to the source.
2. Drain (D): This is the pin through which the current enters the MOSFET when it is on.
3. Source (S): This pin is where the current exits the MOSFET.
The BUT30V is commonly used in various applications, including switching and amplification tasks, due to its efficient performance and low on-resistance.

Manufacturer

The BUT30V is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics designs and produces a wide range of semiconductor solutions, including analog, digital, and mixed-signal devices. The company serves various industries, such as automotive, industrial, consumer electronics, and communications. With a strong focus on innovation and sustainability, STMicroelectronics aims to provide advanced technology solutions that enhance performance and efficiency in electronic systems. They are recognized for their commitment to quality and reliability in the semiconductor market.

Application

The BUT30V is a high-power N-channel MOSFET commonly used in various applications, including power switching, motor control, LED drivers, and amplifiers. It features low on-resistance, making it suitable for energy-efficient circuits. Additionally, it is utilized in switching power supplies and voltage regulation due to its fast switching capabilities and thermal stability.

Equivalent

The BUT30V is a high-voltage N-channel MOSFET. Equivalent products include the BTA30V, BTA30, and BTA40V. Other alternatives may include the IRF840, STP30NF10, and MTP30N06. Always verify specifications like voltage, current ratings, and package type for compatibility in your specific application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire