BUK9Y14-80E

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BUK9Y14-80E

MOSFETs

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  • Mfr. Partie #BUK9Y14-80E
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Vue d'ensemble

Description

BUK9Y14-80E is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a low on-resistance, which minimizes power loss and enhances efficiency in switching applications. With a maximum drain-source voltage (V_DS) of 80V and a continuous drain current (I_D) of 14A, it is suitable for tasks such as power management, DC-DC converters, and motor control.
The device typically operates at high switching frequencies, making it ideal for applications requiring rapid on-off control. Its robust thermal performance and packaging allow for effective heat dissipation, ensuring reliability under high load conditions.
BUK9Y14-80E is commonly used in automotive, industrial, and consumer electronics, where efficiency and thermal management are crucial. Overall, this MOSFET represents a versatile component for designers seeking to optimize power performance in their circuits.

Features

The BUK9Y14-80E is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for various power applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 9A, providing sufficient current capacity for many circuits.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 0.14 ohms at 10V gate drive, enhancing efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) typically ranges from 2V to 4V, allowing for compatibility with low-voltage logic levels.
5. Package Type: It is available in a TO-220 package, facilitating easy thermal management and heatsinking.
Overall, the BUK9Y14-80E is ideal for applications in power supplies, motor drivers, and DC-DC converters due to its robustness and efficiency characteristics.

Package

The BUK9Y14-80E is packaged in a TO-220 format, which is a standard type of package for power transistors. This package provides good thermal performance and is suitable for heat dissipation in high-power applications.

Pinout

The BUK9Y14-80E is an N-channel MOSFET from Nexperia, designed for high-efficiency switching applications. It has a total of 8 pins.
The pin configuration and functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current flows when the MOSFET is turned on.
3. Source (S): The terminal that connects to the ground or negative side of the circuit.
The additional pins may include:
4. Source (S) (2x): Designated for power connections to accommodate different layouts.
5. Gate (G) (2x): Used for signal inputs in parallel configurations.
The BUK9Y14-80E typically supports applications such as power management, motor control, and LED drivers, with a maximum voltage rating of 80V and a continuous drain current of 9A. It features low on-resistance, making it suitable for high-efficiency designs.
Always refer to the specific datasheet for detailed electrical characteristics and absolute maximum ratings.

Manufacturer

The BUK9Y14-80E is manufactured by ON Semiconductor, a global semiconductor company based in the United States. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, logic, and discrete devices. The company serves various industries such as automotive, industrial, telecommunications, consumer electronics, and computing. ON Semiconductor focuses on providing energy-efficient solutions and innovative technologies to enhance performance and sustainability in electronic applications.

Application

BUK9Y14-80E is a high-current N-channel MOSFET primarily used in power management applications. Its application areas include power supplies, motor control, and switching regulators. It is also suitable for automotive applications, battery management systems, and renewable energy systems, such as solar inverters. Its low on-resistance and fast switching capabilities make it ideal for efficient energy conversion and thermal management in electronic circuits.

Equivalent

The BUK9Y14-80E is an N-channel MOSFET. Equivalent products include the STP9NK80Z, IRF840, and FQP9N80C. Always verify specifications such as voltage, current ratings, and package type before substitution.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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