BSZ42DN25NS3G

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BSZ42DN25NS3G

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Spécifications

Manufacturer Infineon Technologies
Package TSDSON-8(3.3x3.3)
RDS(on) 425mΩ@10V,2.5A
Drain to Source Voltage 250V
Pd - Power Dissipation 33.8W
Current - Continuous Drain(Id) 5A
Type 1 N-channel
Gate Threshold Voltage (Vgs(th)@Id) 4V@13uA

Vue d'ensemble

Description

The BSZ42DN25NS3G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance, enabling it to handle significant current with reduced power loss, making it suitable for power management in various devices, including automotive and industrial applications.
This MOSFET operates with a voltage range suitable for medium voltage applications, typically around 25V, and can handle currents up to 42A. Its fast switching capabilities make it ideal for applications such as DC-DC converters, motor drivers, and power supplies.
The packaging is often in a surface-mount configuration, facilitating easy integration into circuit designs. Key characteristics include thermal stability and robustness, ensuring reliable performance under demanding conditions.
Overall, the BSZ42DN25NS3G is a versatile component that plays a crucial role in enhancing the efficiency and performance of modern electronic systems.

Features

The BSZ42DN25NS3G is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 25V, making it suitable for low-voltage applications.
2. Current Handling: Capable of handling continuous drain currents up to 42A, ensuring robust performance in demanding environments.
3. Low On-Resistance (RDS(on)): Offers low on-resistance, typically around 8.6 mΩ at VGS of 10V, which minimizes power loss during operation.
4. Fast Switching: Designed for high-speed switching applications, enhancing overall system efficiency.
5. Thermal Performance: Equipped with a TO-220 package, which provides effective heat dissipation for improved reliability.
6. Gate Threshold Voltage: Features a low gate threshold voltage (VGS(th)), enabling easy driving with standard CMOS logic levels.
These attributes make the BSZ42DN25NS3G suitable for various applications, including power supplies, motor control, and automotive systems.

Package

The BSZ42DN25NS3G is packaged in a TO-220 form factor. This type of package is commonly used for power transistors and provides good thermal performance and ease of mounting.

Pinout

The BSZ42DN25NS3G is a N-channel MOSFET typically used in power management applications. It features a TO-220 package with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin receives the control voltage that turns the MOSFET on or off.
2. Drain (D): This pin connects to the load, allowing current to flow from the drain to the source when the MOSFET is on.
3. Source (S): This pin connects to the ground or the negative side of the power supply in a typical application.
This MOSFET is designed for high-speed switching and has low on-resistance, making it suitable for applications like power converters and motor control. Always refer to the specific datasheet for detailed electrical characteristics and ratings.

Manufacturer

The BSZ42DN25NS3G is manufactured by Nexperia, a company that specializes in discrete, logic, and analog semiconductors. Nexperia is known for producing high-performance electronic components and is a spin-off from NXP Semiconductors. The company focuses on delivering high-quality, reliable products for various applications, including automotive, industrial, and consumer electronics. Nexperia's expertise lies in providing efficient solutions for a wide range of electronic designs, emphasizing small packages and high reliability.

Application

The BSZ42DN25NS3G is a N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drives, and switching power supplies. Its characteristics make it suitable for high-efficiency power conversion, load switching, and signal amplification in consumer electronics, automotive systems, and industrial applications.

Equivalent

The BSZ42DN25NS3G is an N-channel MOSFET. Equivalent products include the IRF3205, STP42NF25, and FQP42N25. Always verify specifications like voltage, current, and R_ds(on) for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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