BSZ0901NS

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BSZ0901NS

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Spécifications

Packaging Reel
Brand Infineon Technologies
Product Type MOSFETs
Subcategory Transistors
Factory Pack Quantity:Factory Pack Quantity 5000
Technology Si
REACH - SVHC Details
Mounting Style SMD/SMT
Package / Case TSDSON-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 145 A
Rds On - Drain-Source Resistance 2.2 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 45 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 69 W
Channel Mode Enhancement
Tradename OptiMOS
Configuration Single
Fall Time 4.8 ns
Height 1 mm
Length 3.3 mm
Rise Time 6.8 ns
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 28 ns
Typical Turn-On Delay Time 5.4 ns
Width 3.3 mm
Part # Aliases BSZ91NSXT SP000854570 BSZ0901NSATMA1
Unit Weight 0.001367 oz
Forward Transconductance - Min 70 S

Vue d'ensemble

Description

BSZ0901NS is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management, switching, and amplification. It features low on-resistance, high-speed switching capabilities, and robust thermal performance, making it suitable for efficient power conversion in devices like power supplies, electric vehicles, and industrial equipment. Key specifications include its voltage and current ratings, which dictate its operational limits. The device is typically housed in a compact package, facilitating easy integration into electronic circuits. Its performance is optimized for both high efficiency and reliability, contributing to improved overall system performance. Understanding its characteristics and proper application is essential for engineers and designers in the field of electronics and power management systems.

Features

The BSZ0901NS is an N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Typically supports a drain-source voltage (Vds) of up to 30V.
2. Current Rating: Capable of handling continuous drain currents (Id) around 60A, allowing for high power efficiency.
3. Low On-Resistance: Offers a very low Rds(on), often around 10mΩ, which minimizes power loss and heat generation during operation.
4. Fast Switching Speed: Optimized for fast switching applications, making it suitable for use in power supplies and DC-DC converters.
5. Thermal Performance: Equipped with a high thermal conductivity package, ensuring effective heat dissipation.
6. Gate Threshold Voltage: Designed with a low gate threshold voltage, facilitating easier drive requirements.
7. Applications: Ideal for use in power management, motor control, and other high-frequency applications.
These features make the BSZ0901NS a versatile choice for modern electronic designs requiring efficient and reliable switching performance.

Package

The BSZ0901NS is typically available in a TO-220 package type. This package is designed for power transistors and offers good thermal performance and robust electrical characteristics.

Pinout

The BSZ0901NS is a N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin enables the MOSFET to conduct current between the drain and source.
2. Drain (D) - The drain pin is where the main current flows out of the MOSFET when it is in the 'on' state.
3. Source (S) - The source pin is where the current flows into the MOSFET from the connected load.
This device is commonly used in applications such as switching, amplification, and power management due to its efficient operation and low on-resistance characteristics.

Manufacturer

The BSZ0901NS is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in producing discrete, logic, and MOSFET components, focusing on high-volume production and efficiency. The company is known for its expertise in the manufacturing of high-performance semiconductor devices, aiming to provide reliable solutions for various applications in automotive, consumer electronics, and industrial sectors. Nexperia was formed as a spin-off from Philips in 2017 and has since positioned itself as a key player in the semiconductor market with a strong emphasis on quality and innovation.

Application

The BSZ0901NS is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, high-speed switching, and motor control. It is suitable for consumer electronics, automotive systems, and industrial automation due to its low on-resistance and high efficiency. Additionally, it can be utilized in communication devices and power supplies for various electronic circuits.

Equivalent

The BSZ0901NS is a N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and 2N7000, among others. When looking for substitutes, ensure they match specifications like voltage, current, and package type. Always consult datasheets for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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